聚l形图引起的深度断电泄漏研究

2020 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2020-06-26 DOI:10.1109/CSTIC49141.2020.9282454

Chong Huang, M. Zhang, Fangce Sun, Steam Cao, Guanghua Yang, Susanna Zheng

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摘要

深度掉电漏电是集成电路芯片，特别是电池供电的单片机芯片的一个非常关键的要求。本文研究了深功耗模式下由于多l型布局而引起的口袋阴影效应。我们尝试优化布局和流程以减少泄漏。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Deep Power Down Leakage Study Caused by Poly L-sbape Pattern

Deep power down leakage is a very key requirement for IC chip, especially for the MCU chips with battery power supply. In this paper, we studied the deep power down mode chip leakage caused pocket shadowing effect due to poly L-shape layout. And we tried to optimize the layout and process to reduce the leakage.

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2020 China Semiconductor Technology International Conference (CSTIC)

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