第24场概述:GaN驱动和转换器:电源管理小组委员会

2016 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2018-02-01 DOI:10.1109/ISSCC.2018.8310343

Y. Ramadass, Gerard Villar Pique, A. Thomsen

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引用次数: 0

摘要

氮化镓功率器件因其降低开关损耗而引起了广泛关注，从而导致小尺寸高频开关变换器的出现。然而，与可靠的GaN栅极驱动器、具有高共模抗扰度的电平移位器和零电压开关检测相关的问题仍然存在。本次会议介绍了基于gan的功率变换器的栅极驱动器和ZVS检测方案的最新进展。

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Session 24 overview: GaN drivers and converters: Power management subcommittee

GaN power devices have garnered significant attention for their reduced switching losses leading to small-form-factor high-frequency switching converters. However, issues related to reliable GaN gate drivers, level shifters with high common-mode immunity and zero-voltage switching detection remain. This session presents recent advances in gate drivers and ZVS detection schemes for GaNbased power converters.

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2016 IEEE International Solid-State Circuits Conference (ISSCC)

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