2018 IEEE International Electron Devices Meeting (IEDM)

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The current status and future prospects of SiC high voltage technology

Pub Date : 2018-12-01 DOI: 10.1109/IEDM.2018.8614480 A. Mihaila, L. Knoll, E. Bianda, M. Bellini, S. Wirths, G. Alfieri, L. Kranz, F. Canales, Munaf T. A. Rahimo

Entire Bias Space Statistical Reliability Simulation By 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs based Circuits

Pub Date : 2018-12-01 DOI: 10.1109/IEDM.2018.8614689 Wangyong Chen, Yun Li, Linlin Cai, P. Chang, G. Du, Xiaoyan Liu

Ge-based Non-Volatile Logic-Memory Hybrid Devices for NAND Memory Application

Pub Date : 2018-12-01 DOI: 10.1109/IEDM.2018.8614533 Na Wei, Bing Chen, Z. Zheng, Zhimei Cai, Rui Zhang, R. Cheng, Shiuh-Wuu Lee, Yi Zhao

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