Ge-based Non-Volatile Logic-Memory Hybrid Devices for NAND Memory Application

Abstract

In this work, novel Ge-on-Insulator (GeOI) MOSFETs with resistive-switchable gate stacks, named RFETs, are proposed and experimentally realized. The junctionless GeOI RFET and typical inversion-mode GeOI RFET are fabricated and both types of RFETs exhibit decent transistor behaviors and RRAM characteristics at the same time. Furthermore, by utilizing these two types of RFETs, a new GeOI RFET-based NAND memory is constructed and the memory functions of the arrays are experimentally demonstrated. This RFET-based NAND memory has a simple cell structure and very simplified I/O circuit in comparison with the conventional flash memory and non-volatile memory such as RRAM and MRAM. Therefore, RFETs should be promising for the applications of next-generation high density, low power memory and in-memory computing and neuromorphic computing.