Entire Bias Space Statistical Reliability Simulation By 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs based Circuits
Wangyong Chen, Yun Li, Linlin Cai, P. Chang, G. Du, Xiaoyan Liu
{"title":"Entire Bias Space Statistical Reliability Simulation By 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs based Circuits","authors":"Wangyong Chen, Yun Li, Linlin Cai, P. Chang, G. Du, Xiaoyan Liu","doi":"10.1109/IEDM.2018.8614689","DOIUrl":null,"url":null,"abstract":"The trap behaviors based 3D-Kinetic Monte Carlo (KMC) simulator is developed for statistical reliability assessment over the entire bias space. The main features include (i) physical insight into trap charging/discharging, coupling and generation/recombination behaviors for tracking trap-induced degradation of MOSFETs with multilayer gate dielectrics in the entire bias space. (ii) simulation of statistical reliability for the MOSFETs biased under arbitrary mixed stress conditions. (iii) assessment of reliability degradation in circuit operations with various Vg/Vd stress patterns and self-heating. The statistical reliability in nanosheet (NS) FETs and corresponding circuits are investigated. The impacts of the initial interface state and bulk trap density on the threshold voltage shift during the stress and relaxation phases are also analyzed.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The trap behaviors based 3D-Kinetic Monte Carlo (KMC) simulator is developed for statistical reliability assessment over the entire bias space. The main features include (i) physical insight into trap charging/discharging, coupling and generation/recombination behaviors for tracking trap-induced degradation of MOSFETs with multilayer gate dielectrics in the entire bias space. (ii) simulation of statistical reliability for the MOSFETs biased under arbitrary mixed stress conditions. (iii) assessment of reliability degradation in circuit operations with various Vg/Vd stress patterns and self-heating. The statistical reliability in nanosheet (NS) FETs and corresponding circuits are investigated. The impacts of the initial interface state and bulk trap density on the threshold voltage shift during the stress and relaxation phases are also analyzed.
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