Strain-Induced Change in the Photonic Properties of Dumbbell-Shaped Graphene Nanoribbon Structures

J. A. Goundar, Ken Suzuki, H. Miura
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Abstract

The ribbon width dependency of graphene nanoribbons (GNR) on the electronic properties showed promising applications in the development of advanced photonic devices, such as multi-bandgap photovoltaic devices. However, large periodic oscillations due to the change in the number of carbon atoms is a major limitation. To effectively control the electronic band properties of the fabricated GNR-based device, in this study, application of strain to the GNR’s is proposed. This study experimentally validates the theoretical concept on an 80-nm ribbon width dumbbell-shaped-GNR structure. The device showed about clear change in the electronic properties under 3 different strain conditions with an observed gauge factor of about 1500. Under an irradiation of a focused laser beam, the device showed an improvement of about 4.5 times under applied strain when compared to an unstrained sample.
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哑铃形石墨烯纳米带结构光子特性的应变诱导变化
石墨烯纳米带宽度对电子性能的依赖性在多带隙光电器件等先进光子器件的开发中具有广阔的应用前景。然而,由于碳原子数量的变化引起的大周期振荡是一个主要的限制。为了有效地控制制备的GNR基器件的电子带特性,本研究提出了在GNR基器件中应用应变的方法。本研究在80 nm带宽哑铃形gnr结构上实验验证了理论概念。在3种不同的应变条件下,器件的电子性能有明显的变化,测量系数约为1500。在聚焦激光束的照射下,该装置在施加应变下的性能比未施加应变的样品提高了约4.5倍。
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