{"title":"Design-oriented compact models for CNTFETs","authors":"F. Prégaldiny, C. Lallement, J. Kammerer","doi":"10.1109/DTIS.2006.1708732","DOIUrl":null,"url":null,"abstract":"This paper deals with the compact modeling of an emerging technology: the carbon nanotube field-effect transistor (CNTFET). The paper proposed two design-oriented compact models, the first one for CNTFET with a classical behavior (MOSFET-like CNTFET), and the second one for CNTFET with an ambipolar behavior (Schottky-barrier CNTFET). Both models have been compared with exact numerical simulations and then implemented in VHDL-AMS","PeriodicalId":399250,"journal":{"name":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","volume":" 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2006.1708732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 48
Abstract
This paper deals with the compact modeling of an emerging technology: the carbon nanotube field-effect transistor (CNTFET). The paper proposed two design-oriented compact models, the first one for CNTFET with a classical behavior (MOSFET-like CNTFET), and the second one for CNTFET with an ambipolar behavior (Schottky-barrier CNTFET). Both models have been compared with exact numerical simulations and then implemented in VHDL-AMS
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