{"title":"Electromigration Failure in Hieavily Doped Polycrystalline Silicon","authors":"M. Polcari, J. Lloyd, S. Cvikevich","doi":"10.1109/IRPS.1980.362936","DOIUrl":null,"url":null,"abstract":"Electromigration induced failures have been observed in both n & p doped polycrystalline silicon conductors. The location of the failure sites was found to depend upon the sign of the charge carrier. Migration of the dopant was identified as the failure mechanism.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"7 21","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Electromigration induced failures have been observed in both n & p doped polycrystalline silicon conductors. The location of the failure sites was found to depend upon the sign of the charge carrier. Migration of the dopant was identified as the failure mechanism.
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