Pub Date : 1980-04-08DOI: 10.1109/IRPS.1980.362948
R. C. Sun, J. Clemens, J. T. Nelson
A new threshold instability phenomenon has been observed in Sigate MOS transistors encapsulated with plasma deposited silicon nitride films. The saturation mode threshold has been observed to drift as much as ¿0.5V when the MOSFET is operating with high drain voltage. Through a series of experiments it is concluded that this instability is due to a chemical effect associated with hydrogen in the nitride films. The formation of surface states and fixed charges in the channel region due to the-interaction of hot carriers with hydrogen present at the interface is proposed to be the basic mechanism. Experimental results with respect to voltage, time and device geometry, will be discussed.
{"title":"Effects of Silicon Nitride Encapsulation on MOS Device Stability","authors":"R. C. Sun, J. Clemens, J. T. Nelson","doi":"10.1109/IRPS.1980.362948","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362948","url":null,"abstract":"A new threshold instability phenomenon has been observed in Sigate MOS transistors encapsulated with plasma deposited silicon nitride films. The saturation mode threshold has been observed to drift as much as ¿0.5V when the MOSFET is operating with high drain voltage. Through a series of experiments it is concluded that this instability is due to a chemical effect associated with hydrogen in the nitride films. The formation of surface states and fixed charges in the channel region due to the-interaction of hot carriers with hydrogen present at the interface is proposed to be the basic mechanism. Experimental results with respect to voltage, time and device geometry, will be discussed.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127480438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-08DOI: 10.1109/IRPS.1980.362934
S. Vaidya, D. Fraser, A. K. Sinha
The electromigration lifetimes were determined for an as-yet unexplored combination of long lines (up to 3cm.) and narrow linewidths (down to 1 ¿m) of evaporated and magnetron sputter-source deposited Al-Cu-Si films. The lifetimes for the sputtered films were found to be significantly smaller than those for e-beam evaporated films. The latter displayed an unusually large improvement in the lifetime for finer linewidths (1.5 and l¿m). Failure modes were analyzed and correlations made with a new microstructural parameter incorporating the film grain-size, its sigma and the degree of preferred orientation.
{"title":"Electromigration Resistance of Fine-Line Al for VLSI Applications","authors":"S. Vaidya, D. Fraser, A. K. Sinha","doi":"10.1109/IRPS.1980.362934","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362934","url":null,"abstract":"The electromigration lifetimes were determined for an as-yet unexplored combination of long lines (up to 3cm.) and narrow linewidths (down to 1 ¿m) of evaporated and magnetron sputter-source deposited Al-Cu-Si films. The lifetimes for the sputtered films were found to be significantly smaller than those for e-beam evaporated films. The latter displayed an unusually large improvement in the lifetime for finer linewidths (1.5 and l¿m). Failure modes were analyzed and correlations made with a new microstructural parameter incorporating the film grain-size, its sigma and the degree of preferred orientation.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114180283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-08DOI: 10.1109/IRPS.1980.362920
M. Shearer, F. Quadri
Magnetic bubble memories have recently. emerged as production products and are being considered for various applications where non-volatility, modularity and ruggedness are desirable. In order to reduce manufacturing costs, densities have been pushed to the 106 bit/cm2 level with further increases being paced mainly by lithography constraints. Bubble memories require magnetic fields generated by current pulses for various functions such as bubble generation, transfer-in, transfer-out and replication. Among the above-mentioned functions, bubble generation and replication require current amplitudes in the. range of 80mA to 200mA for conductors on the order of 4000 Å in thickness with widths of 2-3¿m. These conditions correspond to current densities of 5 × 106 to 2 × 107A/cm2. As the density of bubble devices increases, the current carrying capacity requirements of the conductors will also increase. Among the prominent causes of failure in conductors carrying high current densities are electromigration and melting due to Joule heating. An associated large temperature rise, due to localized Joule heating, may also give rise to metallurgical reactions in a multimetal metallization,. or chemical reactions with the passivation layer or atmosphere. The major constraint in selecting a conductor system is dictated by the desirability of operating device functions with industrial standards of 5 and 12-volt power supplies. This constraint limits potential metallizations to systems with conductivities better than the Al-4% oCu alloy system. Therefore, conductor choices are limited to Cu, Ag, Au and Al based systems.
{"title":"Reliability Analysis of Several Conductors at High Current Densities for use in Bubble Memories","authors":"M. Shearer, F. Quadri","doi":"10.1109/IRPS.1980.362920","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362920","url":null,"abstract":"Magnetic bubble memories have recently. emerged as production products and are being considered for various applications where non-volatility, modularity and ruggedness are desirable. In order to reduce manufacturing costs, densities have been pushed to the 106 bit/cm2 level with further increases being paced mainly by lithography constraints. Bubble memories require magnetic fields generated by current pulses for various functions such as bubble generation, transfer-in, transfer-out and replication. Among the above-mentioned functions, bubble generation and replication require current amplitudes in the. range of 80mA to 200mA for conductors on the order of 4000 Å in thickness with widths of 2-3¿m. These conditions correspond to current densities of 5 × 106 to 2 × 107A/cm2. As the density of bubble devices increases, the current carrying capacity requirements of the conductors will also increase. Among the prominent causes of failure in conductors carrying high current densities are electromigration and melting due to Joule heating. An associated large temperature rise, due to localized Joule heating, may also give rise to metallurgical reactions in a multimetal metallization,. or chemical reactions with the passivation layer or atmosphere. The major constraint in selecting a conductor system is dictated by the desirability of operating device functions with industrial standards of 5 and 12-volt power supplies. This constraint limits potential metallizations to systems with conductivities better than the Al-4% oCu alloy system. Therefore, conductor choices are limited to Cu, Ag, Au and Al based systems.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130778881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-08DOI: 10.1109/IRPS.1980.362917
N. Yamaguchi, S. Hibi
The reliability of magnetic bubble memories were investigated to determine their applicability in electronic switching systems (ESS). The results revealed that reliability sufficient for a 22-year ESS life-time should be expected. Based on these results, thousand ESS magnetic bubble memory units with 4.3 Mbit capacity wEre produced and operated without any problems.
{"title":"Reliability Testing and Evaluation of Magnetic Bubble Memories for Electronic Switching Systems","authors":"N. Yamaguchi, S. Hibi","doi":"10.1109/IRPS.1980.362917","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362917","url":null,"abstract":"The reliability of magnetic bubble memories were investigated to determine their applicability in electronic switching systems (ESS). The results revealed that reliability sufficient for a 22-year ESS life-time should be expected. Based on these results, thousand ESS magnetic bubble memory units with 4.3 Mbit capacity wEre produced and operated without any problems.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"232 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132968531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362942
J. J. Bell
A model has been presented by Hofstein which characterizes drift of free sodium ions through silicon dioxide under positive and negative bias. This investigation examines the model to determine if it is applicable to drift recovery under zero bias conditions. A modified model is presented for the time/temperature relationship of unbiased drift recovery.
{"title":"\"Recovery Characteristics of Ionic Drift Induced Failures under Time/Temperature Stress\"","authors":"J. J. Bell","doi":"10.1109/IRPS.1980.362942","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362942","url":null,"abstract":"A model has been presented by Hofstein which characterizes drift of free sodium ions through silicon dioxide under positive and negative bias. This investigation examines the model to determine if it is applicable to drift recovery under zero bias conditions. A modified model is presented for the time/temperature relationship of unbiased drift recovery.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132230134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362907
R. Merrett, S. Sim, J. P. Bryant
A technique (the capacitance-ratio test) is described for assessing the water content of hermetic packages containing an integrated circuit die. It is based on a theoretical analysis which shows that the frequency dependence of the capacitance between a selected pair of IC metallisation tracks can be used to derive the moisture induced component of this capacitance. A measurement on an encapsulated integrated circuit die, held at a constant temperature, is used to determine the ratio of the moisture induced capacitance and the intrinsic capacitance between metallisation tracks. By comparing this ratio with that obtained from a sample of integrated circuits exposed to a known relative humidity, the test can indicate whether the relative humidity in the package is greater or less than a specified value. The accuracy of the test is comparable with that of other moisture sensing methods for encapsulations, and its sensitivity is adequate for the control of known moisture-related failure mechanisms in integrated circuits.
{"title":"A Simple Method of using the Die of an Integrated Circuit to Measure the Relative Humidity Inside its Encapsulation","authors":"R. Merrett, S. Sim, J. P. Bryant","doi":"10.1109/IRPS.1980.362907","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362907","url":null,"abstract":"A technique (the capacitance-ratio test) is described for assessing the water content of hermetic packages containing an integrated circuit die. It is based on a theoretical analysis which shows that the frequency dependence of the capacitance between a selected pair of IC metallisation tracks can be used to derive the moisture induced component of this capacitance. A measurement on an encapsulated integrated circuit die, held at a constant temperature, is used to determine the ratio of the moisture induced capacitance and the intrinsic capacitance between metallisation tracks. By comparing this ratio with that obtained from a sample of integrated circuits exposed to a known relative humidity, the test can indicate whether the relative humidity in the package is greater or less than a specified value. The accuracy of the test is comparable with that of other moisture sensing methods for encapsulations, and its sensitivity is adequate for the control of known moisture-related failure mechanisms in integrated circuits.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134551393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362952
T. May, B. Ward, C. Jenq
{"title":"Collection of Alpha-Particle-Generated Charge by VLSI Device Structures","authors":"T. May, B. Ward, C. Jenq","doi":"10.1109/IRPS.1980.362952","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362952","url":null,"abstract":"","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116622002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362949
H. R. Bolin
Gate failures are a significant factor in FET field failures. The role of defects (especially particulates) in the gate (thin dielectric) reliability failures on PET's has been previously studied. However, little or no data has been reported on defect size distributions, siting information (where they are located) and density distributions over varying device sizes and topologies. In addition, little is known about correlation of all these parameters to accelerated life test failures. This study was initiated to help provide some of this information.
{"title":"Process Defects and Effects on Mosfet Gate Reliability","authors":"H. R. Bolin","doi":"10.1109/IRPS.1980.362949","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362949","url":null,"abstract":"Gate failures are a significant factor in FET field failures. The role of defects (especially particulates) in the gate (thin dielectric) reliability failures on PET's has been previously studied. However, little or no data has been reported on defect size distributions, siting information (where they are located) and density distributions over varying device sizes and topologies. In addition, little is known about correlation of all these parameters to accelerated life test failures. This study was initiated to help provide some of this information.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116750788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362937
T. Carr
A major problem in the analysis of surface contaminants is the identification and characterization of organics, especially of small areas. The frequently-used surface analytical techniques provide elemental information which is insufficient for organic analysis. Plasma chromotography-mass spectroscopy and the laser Raman microprobe technique are useful in characterizing organic surface contaminants. Both techniques are described and examples of application of the techniques are given.
{"title":"Analysis of Organic Surface Contaminants by Plasma Chromatography - Mass Spectroscopy and Raman Microprobe Techniques","authors":"T. Carr","doi":"10.1109/IRPS.1980.362937","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362937","url":null,"abstract":"A major problem in the analysis of surface contaminants is the identification and characterization of organics, especially of small areas. The frequently-used surface analytical techniques provide elemental information which is insufficient for organic analysis. Plasma chromotography-mass spectroscopy and the laser Raman microprobe technique are useful in characterizing organic surface contaminants. Both techniques are described and examples of application of the techniques are given.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132821215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362925
A. Goel, A. Gray
This paper describes a method for identifying location of hot spots/shorts on MOS integrated circuits using liquid crystal technique. Several articles have been published discussing the theory and principles of this technique. This paper will concentrate on the practical aspects of the method.
{"title":"Liquid Crystal Technique as a Failure Analysis Tool","authors":"A. Goel, A. Gray","doi":"10.1109/IRPS.1980.362925","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362925","url":null,"abstract":"This paper describes a method for identifying location of hot spots/shorts on MOS integrated circuits using liquid crystal technique. Several articles have been published discussing the theory and principles of this technique. This paper will concentrate on the practical aspects of the method.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115621219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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