Reliability Testing and Evaluation of Magnetic Bubble Memories for Electronic Switching Systems

N. Yamaguchi, S. Hibi
{"title":"Reliability Testing and Evaluation of Magnetic Bubble Memories for Electronic Switching Systems","authors":"N. Yamaguchi, S. Hibi","doi":"10.1109/IRPS.1980.362917","DOIUrl":null,"url":null,"abstract":"The reliability of magnetic bubble memories were investigated to determine their applicability in electronic switching systems (ESS). The results revealed that reliability sufficient for a 22-year ESS life-time should be expected. Based on these results, thousand ESS magnetic bubble memory units with 4.3 Mbit capacity wEre produced and operated without any problems.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"232 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362917","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The reliability of magnetic bubble memories were investigated to determine their applicability in electronic switching systems (ESS). The results revealed that reliability sufficient for a 22-year ESS life-time should be expected. Based on these results, thousand ESS magnetic bubble memory units with 4.3 Mbit capacity wEre produced and operated without any problems.
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电子开关系统磁泡存储器可靠性试验与评价
对磁泡存储器的可靠性进行了研究,以确定其在电子开关系统中的适用性。结果表明,可靠性足以达到22年的ESS寿命预期。在此基础上,生产了1000台容量为4.3 Mbit的ESS磁泡存储器,运行正常。
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