{"title":"Fast method to identify the root cause for ILD Vbd fail","authors":"Z. Gan, Y. Wu, K. Zheng, R. Guo, C. Liao","doi":"10.1109/ICSICT.2008.4734520","DOIUrl":null,"url":null,"abstract":"At the process development stage, the non-uniformity of the BEOL dielectric breakdown voltage (Vbd) in a wafer mapping is always observed. Such non-uniformity may be induced either by ¿interface-mode¿ or by ¿CD-mode¿. This paper provides a fast method to identify the root cause for ILD Vbd fail through analyzing the current-voltage (I-V) curves from the V-ramp test.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"25 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
At the process development stage, the non-uniformity of the BEOL dielectric breakdown voltage (Vbd) in a wafer mapping is always observed. Such non-uniformity may be induced either by ¿interface-mode¿ or by ¿CD-mode¿. This paper provides a fast method to identify the root cause for ILD Vbd fail through analyzing the current-voltage (I-V) curves from the V-ramp test.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
