D. Benedikovic, P. Cheben, J. Schmid, Danxia Xu, Shurui Wang, S. Janz, R. Halir, A. Ortega-Moñux, M. Dado
{"title":"High-efficiency subwavelength-engineered surface grating couplers in SOI and DSOI","authors":"D. Benedikovic, P. Cheben, J. Schmid, Danxia Xu, Shurui Wang, S. Janz, R. Halir, A. Ortega-Moñux, M. Dado","doi":"10.1109/GROUP4.2014.6962018","DOIUrl":null,"url":null,"abstract":"The coupling efficiency of a surface grating coupler is optimized for a an arbitrary buried oxide thickness by adjusting the grating radiation angle. The coupler is apodized using a subwavelength structure, allowing a single etch step fabrication. The measured coupling loss is -2.16dB with 3dB bandwidth of 64nm, for a minimum feature size of 100nm. It is also shown by simulations that by implementing this coupler in a double SOI (DSOI) wafer, an ultra-low coupling loss of -0.42dB is achieved.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"9 24","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2014.6962018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The coupling efficiency of a surface grating coupler is optimized for a an arbitrary buried oxide thickness by adjusting the grating radiation angle. The coupler is apodized using a subwavelength structure, allowing a single etch step fabrication. The measured coupling loss is -2.16dB with 3dB bandwidth of 64nm, for a minimum feature size of 100nm. It is also shown by simulations that by implementing this coupler in a double SOI (DSOI) wafer, an ultra-low coupling loss of -0.42dB is achieved.