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11th International Conference on Group IV Photonics (GFP)最新文献

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Advances towards the demonstration of a Ge/SiGe modulator integrated on SOI 集成在SOI上的Ge/SiGe调制器的演示研究进展
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6962027
M. Rouifed, D. Marris-Morini, X. Le roux, P. Chaisakul, J. Frigerio, D. Chrastina, G. Isella, L. Vivien
We investigated Ge/SiGe QW modulators integrated on SOI waveguide. Promising performances are predicted and advances towards the fabrication of the modulators are reported.
研究了集成在SOI波导上的Ge/SiGe QW调制器。展望了该调制器的良好性能,并报道了该调制器的制造进展。
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引用次数: 1
Long-wavelength silicon photonic integrated circuits 长波长硅光子集成电路
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6962009
G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, É. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. Peacock, X. Liu, R. Osgood, W. Green
In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 μm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 μm wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors operating in the 2-3 μm wavelength range. GeSn is proposed as an appealing approach to monolithically integrated long-wavelength detectors. Finally, nonlinear optics in silicon waveguide circuits beyond the two-photon absorption threshold is explored.
本文详细介绍了工作在电信波长窗口以外波长的硅光子集成电路的研究进展。绝缘体上硅波导电路的波长可达3.8 μm,以及工作在5-5 μm波长范围内的硅上锗波导电路。在该平台上实现了III-V半导体和IV-VI半导体的非均质集成,实现了2-3 μm波长范围内激光器和光电探测器的集成。GeSn被认为是一种具有吸引力的单片集成长波长探测器的方法。最后,探讨了硅波导电路中超过双光子吸收阈值的非线性光学。
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引用次数: 0
Silicon-on-insulator single channel-extraction filter for DWDM applications 用于DWDM应用的绝缘体上硅单通道提取滤波器
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961933
C. Alonso‐Ramos, A. Ortega-Moñux, Í. Molina-Fernández, A. Annoni, A. Melloni, M. Strain, M. Sorel, P. Orlandi, P. Bassi, F. Morichetti
A novel silicon photonics filter enabling single-channel-extraction over a wavelength range wider than the telecom C-band is proposed. An extraction bandwidth of only 15 GHz is demonstrated with off-band rejection of more than 15 dB.
提出了一种新型硅光子滤波器,可以在比电信c波段更宽的波长范围内实现单通道提取。提取带宽仅为15ghz,带外抑制大于15db。
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引用次数: 5
High-speed low-voltage BPSK modulation using a silicon micro-ring resonator 使用硅微环谐振器的高速低压BPSK调制
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6962045
Z. Wang, E. Huante-Ceron, A. Knights, A. Karar, J. Cartledge
We demonstrate 10-Gb/s BPSK modulation with 2Vpp driving voltage using a reverse-biased silicon micro-ring resonator. The phase response of all-pass ring resonator is determined by both direct phase measurement and numerical curve fitting.
我们使用反向偏置硅微环谐振器演示了10gb /s BPSK调制和2Vpp驱动电压。采用直接相位测量和数值曲线拟合两种方法确定了全通环形谐振器的相位响应。
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引用次数: 1
Integrated grating coupler/power splitter for on-chip optical power distribution 集成光栅耦合器/功率分配器片上光功率分配
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961966
T. Spuesens, S. Pathak, M. Vanslembrouck, P. Dumon, W. Bogaerts
We present a novel fiber grating coupler structure with integrated 16-way power splitter. The device has a total coupling efficiency of -3.23dB (2.48dB better than a single grating coupler) and a nonuniformity of 1.1dB.
提出了一种集成16路功率分配器的新型光纤光栅耦合器结构。该器件的总耦合效率为-3.23dB(比单光栅耦合器高2.48dB),非均匀性为1.1dB。
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引用次数: 8
Simulations of Ge based optically controlled field effect transistors 基于锗的光控场效应晶体管的仿真
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961989
S. Rajamani, V. Sorianello, A. De Iacovo, L. Colace
We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.
本文报道了基于锗栅极MOSFET的光控场效应晶体管(OCFET)的仿真。研究了该器件在1.55 μm近红外光下的静态和动态特性,并研究了其作为数字逆变器的工作原理。
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引用次数: 4
Si photonic wavelength tunable laser diode with the phase shifter of longitudinal mode 具有纵向模移相器的硅光子波长可调激光二极管
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961928
T. Kita, Rui Tang, K. Nemoto, Hirohito Yamada
We fabricated wavelength tunable laser diodes with Si photonic wire waveguide ring resonators as an external optical cavity. The continuous wavelength tuning operation was demonstrated using by the micro heaters. Our wavelength tunable laser diode is suitable for digital coherent optical transmission systems based on wavelength division multiplexing.
利用硅光子线波导环形谐振腔作为外腔,制备了波长可调的激光二极管。利用微加热器演示了连续波长调谐操作。波长可调激光二极管适用于基于波分复用的数字相干光传输系统。
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引用次数: 3
Ultracompact TM-pass/TE-reflected integrated polarizer based on a hybrid plasmonic waveguide for silicon photonics 基于硅光子学混合等离子波导的超紧凑tm通/ te反射集成偏振器
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961981
Shuai Yuan, Yi Wang, Qingzhong Huang, J. Xia, Jinzhong Yu
We propose a 7.5-μm TM-pass/TE-reflected integrated polarizer using a hybrid plasmonic waveguide. The polarization extinction ratios (PERs) are larger than 20 dB ranging from 1.50 μm to 1.62 μm with 45 dB at 1.55 μm.
我们提出了一种使用混合等离子波导的7.5 μm tm通/ te反射集成偏振器。偏振消光比(PERs)在1.50 ~ 1.62 μm范围内均大于20 dB,在1.55 μm范围内为45 dB。
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引用次数: 5
A novel technique for minimizing power consumption in MZI based silicon switches 一种最小化基于MZI的硅开关功耗的新技术
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6962035
L. Sánchez, A. Griol, A. Brimont, P. Sanchis
Simulation and experimental demonstration of a method to decrease the power consumption in MZI based silicon switches is reported. Switching with electrical powers as low as 3mW have been demonstrated by using the thermo-optic effect.
本文报道了一种降低基于MZI的硅开关功耗的方法的仿真和实验证明。利用热光效应已经证明了低至3mW的电功率开关。
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引用次数: 0
Light-emitting SiGe heterostructures with self-assembled islands for optical interconnection in the wavelength range of 1.3–2.1 μm 波长范围为1.3 ~ 2.1 μm的具有自组装岛的发光SiGe异质结构
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961971
A. Novikov, A. Tonkikh, D. Yurasov, A. Antonov, N. Baydakova, K. Kudryavtsev, M. Shaleev, D. Lobanov, Z. Krasilnik
The paper is devoted to the study of formation and luminescent properties of light-emitting structures with Ge(Si) self-assembled islands grown on Si(001), SOI and relaxed SiGe/Si(001) buffers.
本文研究了生长在Si(001)、SOI和松弛的SiGe/Si(001)缓冲层上的Ge(Si)自组装岛发光结构的形成和发光特性。
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引用次数: 0
期刊
11th International Conference on Group IV Photonics (GFP)
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