R. Millar, K. Gallacher, A. Samarelli, D. Dumas, J. Frigerio, D. Chrastina, G. Isella, Douglas J. Paul
{"title":"Process induced tensile strain of Ge on Si nanopillars by ICP-PECVD SiN stressor layers","authors":"R. Millar, K. Gallacher, A. Samarelli, D. Dumas, J. Frigerio, D. Chrastina, G. Isella, Douglas J. Paul","doi":"10.1109/GROUP4.2014.6961941","DOIUrl":null,"url":null,"abstract":"Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-deposition were used to increase the emission wavelength of germanium nanopillars. These stressors contain less hydrogen than silicon nitride deposited by other techniques, and therefore should provide lower optical loss in strained devices operating near telecoms wavelengths, or in the mid-infrared.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2014.6961941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-deposition were used to increase the emission wavelength of germanium nanopillars. These stressors contain less hydrogen than silicon nitride deposited by other techniques, and therefore should provide lower optical loss in strained devices operating near telecoms wavelengths, or in the mid-infrared.
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