P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, E. Sangiorgi
{"title":"Coupled Monte Carlo simulation of Si and SiO/sub 2/ transport in MOS capacitors","authors":"P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, E. Sangiorgi","doi":"10.1109/SISPAD.2000.871201","DOIUrl":null,"url":null,"abstract":"We present a Monte Carlo (MC) model comprising SiO/sub 2/ and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for nonvolatile memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"24 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
We present a Monte Carlo (MC) model comprising SiO/sub 2/ and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for nonvolatile memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.
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