The multistable charge controlled memory effect in SOI-transistors at low temperatures

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI:10.1109/LTSE.1989.50198

M. Tack, M. Gao, C. Claeys, G. Declerck

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Abstract

The operation of nMOS-transistors, made in SOI material, is investigated at low temperatures. A new phenomenon, the MCCM (multistable charge controlled memory) effect, is observed. Measurements demonstrating this MCCM effect are presented on nMOS transistors made in ZMR-SOI material. A physical model and an analytical model are given. Finally, some very promising applications of the MCCM-effect are highlighted, such as its use as a visible light sensor and as a very dense memory cell, with refresh times on the order of several hours.<>

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低温下soi晶体管的多稳定电荷控制记忆效应

研究了SOI材料制备的nmos晶体管在低温下的工作特性。观察到一种新的现象——多稳态电荷控制记忆效应。在用ZMR-SOI材料制成的nMOS晶体管上进行了测量，证明了这种mcm效应。给出了物理模型和解析模型。最后，重点介绍了mccm效应的一些非常有前途的应用，例如作为可见光传感器和非常密集的存储单元，其刷新时间约为几个小时

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Workshop on Low Temperature Semiconductor Electronics,

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