{"title":"The effects of injection induced bandgap narrowing on bipolar transistors operating at low temperatures","authors":"J. Cressler, D. Tang, E. Yang","doi":"10.1109/LTSE.1989.50176","DOIUrl":null,"url":null,"abstract":"The authors present evidence that injection-induced bandgap-narrowing plays an important role in determining the low-temperature characteristics of bipolar transistors. The transistors used for the investigation were scaled double-polysilicon self-aligned devices that have yielded sub-200 pS ECL (emitter coupled logic) gate delays at LN/sub 2/ temperature. The bandgap-narrowing phenomenon is shown to occur when a high density of free carriers is injected into the neutral base region of the device under high-current conditions; the net result is a significant enhancement in the low-temperature current gain that is unaccounted for in conventional device theory. This perturbation of the low-temperature device properties must be carefully considered for accurate device and circuit modelling.<<ETX>>","PeriodicalId":428125,"journal":{"name":"Proceedings of the Workshop on Low Temperature Semiconductor Electronics,","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Workshop on Low Temperature Semiconductor Electronics,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTSE.1989.50176","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The authors present evidence that injection-induced bandgap-narrowing plays an important role in determining the low-temperature characteristics of bipolar transistors. The transistors used for the investigation were scaled double-polysilicon self-aligned devices that have yielded sub-200 pS ECL (emitter coupled logic) gate delays at LN/sub 2/ temperature. The bandgap-narrowing phenomenon is shown to occur when a high density of free carriers is injected into the neutral base region of the device under high-current conditions; the net result is a significant enhancement in the low-temperature current gain that is unaccounted for in conventional device theory. This perturbation of the low-temperature device properties must be carefully considered for accurate device and circuit modelling.<>
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