Liquid nitrogen CMOS system study

D. Meyer
{"title":"Liquid nitrogen CMOS system study","authors":"D. Meyer","doi":"10.1109/LTSE.1989.50172","DOIUrl":null,"url":null,"abstract":"In a liquid-nitrogen CMOS (LNCMOS) study, all major technical areas of interest were investigated including: device design and modeling, circuit design, process design, packaging, reliability, testing, refrigeration systems, system applications, and performance. In each of these areas, physical hardware was evaluated to determine the actual advantages. Three IBM CMOS technologies were evaluated to determine relative system performance improvements: 1.0- mu m n-well CMOS, n/sup +/ polysilicon, 5-V operation; 0.5- mu m n-well CMOS, n/sup +/ polysilicon with silicide on polysilicon and diffusions (salicide), 3.3-V operation; and 0.5- mu m n-well CMOS (LNCMOS), n/sup +/ silicide on nFET and p/sup +/ silicide on pFET, threshold voltage implant optimization, 2.5-V operation. These three CMOS technologies are closely related to each other by scaling and the LNCMOS process is an optimization of the 0.5- mu m CMOS process. It is concluded that LNCMOS is a viable system technology for military and commercial systems.<<ETX>>","PeriodicalId":428125,"journal":{"name":"Proceedings of the Workshop on Low Temperature Semiconductor Electronics,","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Workshop on Low Temperature Semiconductor Electronics,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTSE.1989.50172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In a liquid-nitrogen CMOS (LNCMOS) study, all major technical areas of interest were investigated including: device design and modeling, circuit design, process design, packaging, reliability, testing, refrigeration systems, system applications, and performance. In each of these areas, physical hardware was evaluated to determine the actual advantages. Three IBM CMOS technologies were evaluated to determine relative system performance improvements: 1.0- mu m n-well CMOS, n/sup +/ polysilicon, 5-V operation; 0.5- mu m n-well CMOS, n/sup +/ polysilicon with silicide on polysilicon and diffusions (salicide), 3.3-V operation; and 0.5- mu m n-well CMOS (LNCMOS), n/sup +/ silicide on nFET and p/sup +/ silicide on pFET, threshold voltage implant optimization, 2.5-V operation. These three CMOS technologies are closely related to each other by scaling and the LNCMOS process is an optimization of the 0.5- mu m CMOS process. It is concluded that LNCMOS is a viable system technology for military and commercial systems.<>
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
液氮CMOS系统研究
在一项液氮CMOS (LNCMOS)研究中,研究了所有主要的技术领域,包括:器件设计和建模、电路设计、工艺设计、封装、可靠性、测试、制冷系统、系统应用和性能。在这些领域中,对物理硬件进行了评估,以确定实际优势。评估了三种IBM CMOS技术,以确定相对的系统性能改进:1.0 μ m n阱CMOS, n/sup +/多晶硅,5 v操作;0.5 μ m n阱CMOS, n/sup +/多晶硅,多晶硅上有硅化物和扩散物(水杨酸),3.3 v工作;和0.5 μ m n阱CMOS (LNCMOS), nFET上n/sup +/硅化物和pFET上p/sup +/硅化物,阈值电压植入优化,2.5 v工作。这三种CMOS技术通过缩放密切相关,LNCMOS工艺是对0.5 μ m CMOS工艺的优化。得出结论,LNCMOS是一种可行的军事和商业系统技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
The multistable charge controlled memory effect in SOI-transistors at low temperatures Characterization and modeling of BiCMOS logic for low temperature operation Refrigeration for low temperature (77 K) electronics Liquid nitrogen CMOS system study The effects of injection induced bandgap narrowing on bipolar transistors operating at low temperatures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1