{"title":"Energy funnels - A new oxide breakdown model","authors":"Cheung, Colonell, Chang, Lai, Liu, Pai","doi":"10.1109/VLSIT.1997.623740","DOIUrl":null,"url":null,"abstract":"Stress induced leakage current (SILC) and soft breakdown (SBD) are current hot topics[l,2] in thin gate-oxide reliability. We wish to report here some new experimental observations and to propose a new model for trap assisted tunneling (TAT), SBD and Hard breakdown (HBD).","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"20 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623740","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Stress induced leakage current (SILC) and soft breakdown (SBD) are current hot topics[l,2] in thin gate-oxide reliability. We wish to report here some new experimental observations and to propose a new model for trap assisted tunneling (TAT), SBD and Hard breakdown (HBD).
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