{"title":"Dielectric Planarization Using Mn203 Slurry","authors":"Kishii, Nakamura, Anmoto","doi":"10.1109/VLSIT.1997.623678","DOIUrl":null,"url":null,"abstract":"We have developed an MQO~ slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between 1 wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have developed an MQO~ slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between 1 wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is
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