{"title":"Mechanical characterization of wafer level bump-less Cu-Cu bonding","authors":"L. Peng, L. Zhang, H.Y. Li, G. Lo, C. Tan","doi":"10.1109/EPTC.2012.6507123","DOIUrl":null,"url":null,"abstract":"In this paper, the mechanical properties of wafer-level high density Cu-Cu bonding are analyzed. The fabrication flow is optimized based on surface cleanliness, wafer uniformity, W2W alignment accuracy and oxide recess for successful bonding. Post- bonding characterizations include shear test and failure analysis to identify the mechanical strength and failure mechanisms. It is found that failures at Cu-Cu bonding interface are largely attributed to wafer non-uniformity.","PeriodicalId":431312,"journal":{"name":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","volume":"27 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2012.6507123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, the mechanical properties of wafer-level high density Cu-Cu bonding are analyzed. The fabrication flow is optimized based on surface cleanliness, wafer uniformity, W2W alignment accuracy and oxide recess for successful bonding. Post- bonding characterizations include shear test and failure analysis to identify the mechanical strength and failure mechanisms. It is found that failures at Cu-Cu bonding interface are largely attributed to wafer non-uniformity.
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