{"title":"A new edge termination technique for SiC power devices","authors":"Shuntao Hu, K. Sheng","doi":"10.1109/ISDRS.2003.1272024","DOIUrl":null,"url":null,"abstract":"In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"11 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.
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