Pub Date : 2004-05-04DOI: 10.1109/ISDRS.2003.1272167
M. Nelson, B. Williams, C. Belisle, S. Aytes, D. Beasterfield, J. Liu, S. Donaldson, J. Prasad
Chemical mechanical polishing causes dishing in the planarized layer causing significant topographical challenges for subsequent patterning. One solution for dishing phenomenon is introduction of metal pattern fill with dummy structures as a method to improve planarity for a given layer. This paper deals with the optimization of planarity and parasitic capacitance. Wafer level topography maps illustrates the planarity of circuit without pattern fill. Parasitic capacitance analysis is performed by closed form solution. Using the analysis of the circuit-level parasitic capacitance tool, the estimated effect on various circuit nets is calculated.
{"title":"Optimizing pattern fill for planarity and parasitic capacitance","authors":"M. Nelson, B. Williams, C. Belisle, S. Aytes, D. Beasterfield, J. Liu, S. Donaldson, J. Prasad","doi":"10.1109/ISDRS.2003.1272167","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272167","url":null,"abstract":"Chemical mechanical polishing causes dishing in the planarized layer causing significant topographical challenges for subsequent patterning. One solution for dishing phenomenon is introduction of metal pattern fill with dummy structures as a method to improve planarity for a given layer. This paper deals with the optimization of planarity and parasitic capacitance. Wafer level topography maps illustrates the planarity of circuit without pattern fill. Parasitic capacitance analysis is performed by closed form solution. Using the analysis of the circuit-level parasitic capacitance tool, the estimated effect on various circuit nets is calculated.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115533632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/ISDRS.2003.1271996
Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, N. Wu, Hang Hu, M. F. Li, A. Chin, D. Chan, W. D. Wang, D. Kwong
This paper presents high-k value Ta/sub 2/O/sub 5/ incorporated into the HfO/sub 2/ film to improved crystallization temperature and interfacial properties. Here we reported the (HfO/sub 2/)/sub 0.57/(Ta/sub 2/O/sub 5/)/sub 0.43/ MOSFET with TaN metal gate.
{"title":"Improved crystallization temperature and interfacial properties of HfO/sub 2/ gate dielectrics by adding Ta/sub 2/O/sub 5/ with TaN metal gate","authors":"Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, N. Wu, Hang Hu, M. F. Li, A. Chin, D. Chan, W. D. Wang, D. Kwong","doi":"10.1109/ISDRS.2003.1271996","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1271996","url":null,"abstract":"This paper presents high-k value Ta/sub 2/O/sub 5/ incorporated into the HfO/sub 2/ film to improved crystallization temperature and interfacial properties. Here we reported the (HfO/sub 2/)/sub 0.57/(Ta/sub 2/O/sub 5/)/sub 0.43/ MOSFET with TaN metal gate.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"4603 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128206817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/ISDRS.2003.1272114
R. Mendis, C. Sydlo, J. Sigmund, M. Feiginov, P. Meissner, H. Hartnagel
A continuous wave(CW) terahertz(THz) optoelectronic system, based upon low-temperature-grown (LTG) GaAs photoconductor technology, capable of generating coherent radiation with frequencies tunable up to about 3 THz is reported in this paper. The aim of the research is to optimize the photoconductive emitter design for high output power. The results are obtained with a log-periodic circular-toothed antenna having a 6-finger photomixer at the driving point. The optical power sweep data are obtained at a frequency of 0.5 THz and a bias voltage of 20 V. At the maximum optical power of 26 mW, the recorded lock-in signal corresponds to a THz power level of /spl ap/ 50 nW. The lock-in signal which is directly proportional to the THz power shows the characteristic quadratic behavior at low optical power levels.
{"title":"Tunable CW-THz system with a log-periodic photoconductive emitter","authors":"R. Mendis, C. Sydlo, J. Sigmund, M. Feiginov, P. Meissner, H. Hartnagel","doi":"10.1109/ISDRS.2003.1272114","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272114","url":null,"abstract":"A continuous wave(CW) terahertz(THz) optoelectronic system, based upon low-temperature-grown (LTG) GaAs photoconductor technology, capable of generating coherent radiation with frequencies tunable up to about 3 THz is reported in this paper. The aim of the research is to optimize the photoconductive emitter design for high output power. The results are obtained with a log-periodic circular-toothed antenna having a 6-finger photomixer at the driving point. The optical power sweep data are obtained at a frequency of 0.5 THz and a bias voltage of 20 V. At the maximum optical power of 26 mW, the recorded lock-in signal corresponds to a THz power level of /spl ap/ 50 nW. The lock-in signal which is directly proportional to the THz power shows the characteristic quadratic behavior at low optical power levels.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"47 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114122519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272026
M. Derenge, K. Jones, K. Kirchner, M. Ervin
In this paper, AlN films annealing cap for 4H SiC in a nitrogen and argon atmosphere and also the samples are imaged by SEM and AFM to examine the surface morphology of the AlN film. The results obtained from this experiments are compared.
{"title":"A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere","authors":"M. Derenge, K. Jones, K. Kirchner, M. Ervin","doi":"10.1109/ISDRS.2003.1272026","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272026","url":null,"abstract":"In this paper, AlN films annealing cap for 4H SiC in a nitrogen and argon atmosphere and also the samples are imaged by SEM and AFM to examine the surface morphology of the AlN film. The results obtained from this experiments are compared.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123101722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272175
S. S. Islam, M. Rahman, A. Anwar
In the present abstract the non-linearity and power performance of AlGaN/GaN HFETs upon varying thickness and Al-mole fraction of the barrier AlGaN layer is presented. The present calculation is based upon the determination of the 2DEG concentration by solving Schrodinger and Poisson's equations self-consistently as well as incorporating non-stationary transport to obtain the carrier velocity-electric field characteristics. Charge control is obtained by accounting for the total polarization in the barrier AlGaN layer and the GaN layer at the heterointerface. Device nonlinearity has been analyzed using Volterra Series technique which shows the output referred third-order intercept point (OIP3), referred as the output power level at which third-order intermodulation component of the output power crosses the fundamental component. the third-order intermodulation is also achieved at higher barrier thickness. A higher IM3 is also achieved at higher Al-mole fraction.
{"title":"Barrier thickness and mole fraction dependence of power performance of undoped supply layer-AlGaN/GaN HFETs","authors":"S. S. Islam, M. Rahman, A. Anwar","doi":"10.1109/ISDRS.2003.1272175","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272175","url":null,"abstract":"In the present abstract the non-linearity and power performance of AlGaN/GaN HFETs upon varying thickness and Al-mole fraction of the barrier AlGaN layer is presented. The present calculation is based upon the determination of the 2DEG concentration by solving Schrodinger and Poisson's equations self-consistently as well as incorporating non-stationary transport to obtain the carrier velocity-electric field characteristics. Charge control is obtained by accounting for the total polarization in the barrier AlGaN layer and the GaN layer at the heterointerface. Device nonlinearity has been analyzed using Volterra Series technique which shows the output referred third-order intercept point (OIP3), referred as the output power level at which third-order intermodulation component of the output power crosses the fundamental component. the third-order intermodulation is also achieved at higher barrier thickness. A higher IM3 is also achieved at higher Al-mole fraction.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124902765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272033
Ming Hsiang Chiou, K. Hsu
In this presentation, a new modeling technique to exactly describe the time-domain (TD) responses of deep sub-micron MOSFETs, which leads to wideband models. This new method is suitable for modeling of MOSFETs used in high-speed or switching type circuits. To meet the wideband requirement without any alteration on the DC bias condition, the equivalent circuit models incorporate BSIM3v3 during the modelling process.
{"title":"A new wideband modeling technique for deep sub-micron MOSFETs","authors":"Ming Hsiang Chiou, K. Hsu","doi":"10.1109/ISDRS.2003.1272033","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272033","url":null,"abstract":"In this presentation, a new modeling technique to exactly describe the time-domain (TD) responses of deep sub-micron MOSFETs, which leads to wideband models. This new method is suitable for modeling of MOSFETs used in high-speed or switching type circuits. To meet the wideband requirement without any alteration on the DC bias condition, the equivalent circuit models incorporate BSIM3v3 during the modelling process.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124940457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272381
K. Kim, A. Iliadis, V. Granatstein
In this paper, we focus on the effects on n-channel enhancement mode MOSFET devices where the microwave interference is injected into the input/output leads of the devices. The injected microwave power significantly affects output current, transconductance, output conductance, and breakdown voltage for power levels above 10 dBm in the frequency range between 1 and 20 GHz. The power effects were observed to be suppressed at frequencies above 4 GHz for these devices indicating the possibility of ineffective RF power coupling to devices of this size at the higher frequency range.
{"title":"Study of the effects of microwave interference on MOSFET devices in CMOS integrated circuits","authors":"K. Kim, A. Iliadis, V. Granatstein","doi":"10.1109/ISDRS.2003.1272381","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272381","url":null,"abstract":"In this paper, we focus on the effects on n-channel enhancement mode MOSFET devices where the microwave interference is injected into the input/output leads of the devices. The injected microwave power significantly affects output current, transconductance, output conductance, and breakdown voltage for power levels above 10 dBm in the frequency range between 1 and 20 GHz. The power effects were observed to be suppressed at frequencies above 4 GHz for these devices indicating the possibility of ineffective RF power coupling to devices of this size at the higher frequency range.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123659967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/isdrs.2003.1272121
W. Mitchel, W. Mitchell, M. Zvanut
The paper presents the temperature dependent measurements of the Hall effect along with the resistivity for a variety of high purity and vanadium doped SI 4H-SiC (semi-insulating SiC) samples at temperatures up to 850 /spl deg/C. Resistivity measurements after annealing the samples at temperatures up to 1800 /spl deg/C are reported. The Hall effect experiments on samples of all three types indicate that the conduction is n-type with a variety of activation energies very close to those for the activation energy. The resistivity and Hall effect coefficient data were analysed using simplified two-carrier models to investigate the possibility of mixed conduction due to intrinsic activation of both electron and holes.
{"title":"High temperature Hall effect measurements of semi-insulating 4H-SiC substrates","authors":"W. Mitchel, W. Mitchell, M. Zvanut","doi":"10.1109/isdrs.2003.1272121","DOIUrl":"https://doi.org/10.1109/isdrs.2003.1272121","url":null,"abstract":"The paper presents the temperature dependent measurements of the Hall effect along with the resistivity for a variety of high purity and vanadium doped SI 4H-SiC (semi-insulating SiC) samples at temperatures up to 850 /spl deg/C. Resistivity measurements after annealing the samples at temperatures up to 1800 /spl deg/C are reported. The Hall effect experiments on samples of all three types indicate that the conduction is n-type with a variety of activation energies very close to those for the activation energy. The resistivity and Hall effect coefficient data were analysed using simplified two-carrier models to investigate the possibility of mixed conduction due to intrinsic activation of both electron and holes.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125481494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272199
G. Krokidis, J. Xanthakis, A. Iliadis
This article investigates the correlation between the optical and transport properties of zinc oxide-zinc magnesium oxide double barrier system by investigating the localization of the energy levels in the quantum well. Effective mass approach is used to investigate this system. The degree of localization of the levels in the quantum well is also examined with respect to the width of the ZnMgO barriers. The energy bands for ZnO/Zn/sub 0.8/Mg/sub 0.2/O structure is also studied.
{"title":"A modeling of the optical properties of the zinc oxide-zinc magnesium oxide double barrier system","authors":"G. Krokidis, J. Xanthakis, A. Iliadis","doi":"10.1109/ISDRS.2003.1272199","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272199","url":null,"abstract":"This article investigates the correlation between the optical and transport properties of zinc oxide-zinc magnesium oxide double barrier system by investigating the localization of the energy levels in the quantum well. Effective mass approach is used to investigate this system. The degree of localization of the levels in the quantum well is also examined with respect to the width of the ZnMgO barriers. The energy bands for ZnO/Zn/sub 0.8/Mg/sub 0.2/O structure is also studied.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129513403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272009
S. Srivastava, K. Roenker
A one dimensional, drift-diffusion based, analytical model is reported which describes the operation and performance of the InP-based uni-traveling carrier photodiode (UTC-PD). The UTC-PD has been proposed as a replacement for the InGaAs PIN photodiode for long wavelength optical communications. In this work, the development of an analytical model is described for use in investigation of the device's operation and the effects of the device structure on the operational performance of the device. The effects of a finite conduction band barrier at the collector end of the absorption layer on the photocurrent and onset of high injection effects is examined. Also included in the model is the leakage current due to a finite conduction band barrier at the blocking end of the absorption layer. The results are discussed in relation to reports of the device's experimentally observed performance and numerical modeling results.
{"title":"Analytical model for the InP/InGaAs uni-travelling carrier photodiode","authors":"S. Srivastava, K. Roenker","doi":"10.1109/ISDRS.2003.1272009","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272009","url":null,"abstract":"A one dimensional, drift-diffusion based, analytical model is reported which describes the operation and performance of the InP-based uni-traveling carrier photodiode (UTC-PD). The UTC-PD has been proposed as a replacement for the InGaAs PIN photodiode for long wavelength optical communications. In this work, the development of an analytical model is described for use in investigation of the device's operation and the effects of the device structure on the operational performance of the device. The effects of a finite conduction band barrier at the collector end of the absorption layer on the photocurrent and onset of high injection effects is examined. Also included in the model is the leakage current due to a finite conduction band barrier at the blocking end of the absorption layer. The results are discussed in relation to reports of the device's experimentally observed performance and numerical modeling results.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129560380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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