{"title":"Trench DRAM structures for the analysis of two- and three-dimensional leakage phenomena","authors":"S. Voldman","doi":"10.1109/ICMTS.1990.161720","DOIUrl":null,"url":null,"abstract":"Two- and three-dimensional leakage phenomena in moderately and heavily doped and gate diode structures are analyzed using a novel set of macro-array trench DRAM (dynamic random-access memory) capacitor storage nodes and planar MOS drain structures. Heavily doped gated diode structures (trench and planar) are used for the analysis of the gate-induced thermal generation mechanism and band-to-band tunneling. The results are relevant for understanding the leakage phenomena in trench DRAM and MOSFET drain structures.<<ETX>>","PeriodicalId":417292,"journal":{"name":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","volume":"1 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.161720","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Two- and three-dimensional leakage phenomena in moderately and heavily doped and gate diode structures are analyzed using a novel set of macro-array trench DRAM (dynamic random-access memory) capacitor storage nodes and planar MOS drain structures. Heavily doped gated diode structures (trench and planar) are used for the analysis of the gate-induced thermal generation mechanism and band-to-band tunneling. The results are relevant for understanding the leakage phenomena in trench DRAM and MOSFET drain structures.<>
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