A Novel Sal-Pinsch Quantum Well Laser Structure for a Pinched Beam Divergence

Young-Kai Chen, Ming C. Wu, M. Hong, J. Mannaerts, M. Chin, A. Sergent
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Abstract

Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20 degrees transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power. >
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一种具有缩束发散的新型萨尔-平施量子阱激光结构
只提供摘要形式。报道了一种边缘发射应变AlGaAs/InGaAs/GaAs量子阱激光器结构。它具有周期指数分离约束异质结构(PINSCH)光约束层,具有小光束发散和高输出功率。AR/ hr涂层自对准脊波导激光器的初步测量表明,在980 nm激光波长下,连续波输出功率高达350 mW,横向光束发散度为20度。这种低光束发散导致了高达51%的单模光纤耦合效率。在PINSCH约束层中,光场的扩展显著地抑制了光束的横向发散,提高了最大输出功率。>
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A Novel Sal-Pinsch Quantum Well Laser Structure for a Pinched Beam Divergence High Speed Single Quantum Well Ingaas/gaas Laser Design and Experiment Development of an Interactive Design Environment for Heterostructure and Quantum-Well Devices Low-threshold Ingas/gaas Strained-layer Surface Emitting Lasers With Two 45/spl deg/ Angle Etched Total Reflection Mirrors Large Cw Power, Very Low Threshold, Single Transverse Mode Operation of Vertical Cavity Mushroom Structure Surface Emitting Lasers
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