High Speed Single Quantum Well Ingaas/gaas Laser Design and Experiment

R. Nagarajan, T. Fukushima, J. Bowers, R. Geels, L. Coldren
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Abstract

Summary form only given. The authors report damping factors an order of magnitude lower than previously reported for SQW lasers. They also report bandwidths of 15 GHz obtained in SQW (single quantum well) lasers as a result of proper design of the quantum-well structure. The laser samples were grown on
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高速单量子阱Ingaas/gaas激光器设计与实验
只提供摘要形式。作者报告的阻尼因子比先前报道的SQW激光器低一个数量级。他们还报告说,由于量子阱结构的适当设计,SQW(单量子阱)激光器获得了15 GHz的带宽。在激光样品上生长
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A Novel Sal-Pinsch Quantum Well Laser Structure for a Pinched Beam Divergence High Speed Single Quantum Well Ingaas/gaas Laser Design and Experiment Development of an Interactive Design Environment for Heterostructure and Quantum-Well Devices Low-threshold Ingas/gaas Strained-layer Surface Emitting Lasers With Two 45/spl deg/ Angle Etched Total Reflection Mirrors Large Cw Power, Very Low Threshold, Single Transverse Mode Operation of Vertical Cavity Mushroom Structure Surface Emitting Lasers
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