G. Olbright, R. Bryan, W. S. Fu, R. Apte, D. Bloom
Summary form only given. The linewidth of vertical-cavity surface-emitting lasers (VCSELs) (65 MHz), the tunability of their lasing wavelength (20 AA), and the tunability of the heterodyne beat frequency (65 MHz to 150 GHz) were measured by varying the drive current to the lasers. The ability to control the output wavelength of VCSELs by current and location on the wafer makes it possible to extrapolate tunability over a range from 65 MHz to 3 THz. While the spatial tunability of 3 THz is of interest for wavelength-division multiplexing schemes, the current tunability of 150 GHz is attractive for frequency control and stabilization. The observation of narrow VCSEL linewidths is encouraging for their potential applications in communications. >
{"title":"Heterodyne Measurement of Linewidth, Tunability and Frequency Synthesis of Vertical-Cavity Surface-Emitting Laser Diode Arrays","authors":"G. Olbright, R. Bryan, W. S. Fu, R. Apte, D. Bloom","doi":"10.1109/DRC.1991.664684","DOIUrl":"https://doi.org/10.1109/DRC.1991.664684","url":null,"abstract":"Summary form only given. The linewidth of vertical-cavity surface-emitting lasers (VCSELs) (65 MHz), the tunability of their lasing wavelength (20 AA), and the tunability of the heterodyne beat frequency (65 MHz to 150 GHz) were measured by varying the drive current to the lasers. The ability to control the output wavelength of VCSELs by current and location on the wafer makes it possible to extrapolate tunability over a range from 65 MHz to 3 THz. While the spatial tunability of 3 THz is of interest for wavelength-division multiplexing schemes, the current tunability of 150 GHz is attractive for frequency control and stabilization. The observation of narrow VCSEL linewidths is encouraging for their potential applications in communications. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117160861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Jensen, W. Stanchina, R. A. Metzger, T. Liu, T. V. Kargodorian, M. W. Pierce, L. McCray
Summary form only given. Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f/sub t/ and f/sub max/ of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design which incorporated a low-temperature p-GaInAs spacer as part of the base to inhibit beryllium diffusion. The AlInAs-GaInAs HBT device layers were grown lattice-matched to semi-insulating InP substrates by solid-source molecular beam epitaxy (MBE). >
{"title":"36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology","authors":"J. Jensen, W. Stanchina, R. A. Metzger, T. Liu, T. V. Kargodorian, M. W. Pierce, L. McCray","doi":"10.1109/DRC.1991.664725","DOIUrl":"https://doi.org/10.1109/DRC.1991.664725","url":null,"abstract":"Summary form only given. Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f/sub t/ and f/sub max/ of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design which incorporated a low-temperature p-GaInAs spacer as part of the base to inhibit beryllium diffusion. The AlInAs-GaInAs HBT device layers were grown lattice-matched to semi-insulating InP substrates by solid-source molecular beam epitaxy (MBE). >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128804467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yang-Hua Chang, G. Li, A. Oki, D. Streit, M. Hafizi, M.E. Kim
Summary form only given. Recently, current-induced degradation in the form of V/sub BE/ shifts has been reported when the heterojunction is stressed under high-level forward current injection. Although the V/sub BE/ shift is an indication of device parameter change, the degradation mechanisms cannot be readily identified. An approach is presented that uncovers the device degradation mechanisms by measuring the inverted mode I/sub C/ at room temperature and the forward mode I/sub B/ at low temperature. The correlation between the change in the inverted I/sub C/ and an anomalous component (tunneling current) of I/sub B/ is observed and attributed to beryllium interstitial diffusion into substitutional sites. >
{"title":"On the Investigation of Degradation Mechanisms in Ultra-High Performance Gaas Heterojunction Bipolar Transistors","authors":"Yang-Hua Chang, G. Li, A. Oki, D. Streit, M. Hafizi, M.E. Kim","doi":"10.1109/DRC.1991.664724","DOIUrl":"https://doi.org/10.1109/DRC.1991.664724","url":null,"abstract":"Summary form only given. Recently, current-induced degradation in the form of V/sub BE/ shifts has been reported when the heterojunction is stressed under high-level forward current injection. Although the V/sub BE/ shift is an indication of device parameter change, the degradation mechanisms cannot be readily identified. An approach is presented that uncovers the device degradation mechanisms by measuring the inverted mode I/sub C/ at room temperature and the forward mode I/sub B/ at low temperature. The correlation between the change in the inverted I/sub C/ and an anomalous component (tunneling current) of I/sub B/ is observed and attributed to beryllium interstitial diffusion into substitutional sites. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"17 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132748102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. Heterostructures provide so many design parameters that it is impractical to adequately explore the design space empirically. The ability to evaluate the effects of changes to any design parameter rapidly is needed. A program, BandProf, that implements a one-dimensional, zero-current model to determine the self-consistent electrostatic potential and thus the energy-band profile is discussed. Realistic physical models are employed, including multiple-band extrema and full impurity statistics. This approach to device simulation, demanding results in a few seconds for structures of arbitrary design, requires that elegant and robust techniques be applied to every task performed by the program. Two such innovations embodied in BandProf are described. >
{"title":"Development of an Interactive Design Environment for Heterostructure and Quantum-Well Devices","authors":"W. Frensley","doi":"10.1109/DRC.1991.664696","DOIUrl":"https://doi.org/10.1109/DRC.1991.664696","url":null,"abstract":"Summary form only given. Heterostructures provide so many design parameters that it is impractical to adequately explore the design space empirically. The ability to evaluate the effects of changes to any design parameter rapidly is needed. A program, BandProf, that implements a one-dimensional, zero-current model to determine the self-consistent electrostatic potential and thus the energy-band profile is discussed. Realistic physical models are employed, including multiple-band extrema and full impurity statistics. This approach to device simulation, demanding results in a few seconds for structures of arbitrary design, requires that elegant and robust techniques be applied to every task performed by the program. Two such innovations embodied in BandProf are described. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114792746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Kuriyama, S. Kiyama, T. Kuwahara, S. Noguchi, S. Nakano
Summary form only given. A SEM study after dry etching was conducted for poly-Si films recrystallized by excimer laser annealing. It was found that the grain size could be enlarged to about 300 nm using the low-temperature (400 degrees C) substrate heating method. The authors propose a low-temperature ( >
{"title":"A New Method to Enhance Mobility of Poly-Si Tft Recrystallized by Excimer Laser Annealing","authors":"H. Kuriyama, S. Kiyama, T. Kuwahara, S. Noguchi, S. Nakano","doi":"10.1109/DRC.1991.664674","DOIUrl":"https://doi.org/10.1109/DRC.1991.664674","url":null,"abstract":"Summary form only given. A SEM study after dry etching was conducted for poly-Si films recrystallized by excimer laser annealing. It was found that the grain size could be enlarged to about 300 nm using the low-temperature (400 degrees C) substrate heating method. The authors propose a low-temperature ( >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133749046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. A description is given of a device which consists of an input rib waveguide, a vertically defined coupler, a vertically coupled mesa p-i-n photodiode (PD), a second coupler, and a second PD, all serially connected. A gold cover on the first coupler ensures that only TE-polarized light is coupled into the first PD; the second coupler/PD pair collects the remaining TM light. Component lengths are 79 and 54 mu m for couplers and 21 and 31 mu m for PDs, for approximately 200- mu m total detector length. The device consists of p-InGaAsP/i-InGaAs/n-InGaAsP PD layers above semi-insulating coupler layers (two GaAsP:Fe guides, InP:Fe cladding). The vertically integrated coupler/detectors are more than an order of magnitude smaller than conventional couplers, and of comparable size to electronic components (e.g. FET gate widths). >
{"title":"Ultra-Compact Monolithic Integration of Polarization Diversity Waveguide/Photodiodes","authors":"R. J. Den, E. Pennings, R. Hawkins, C. Caneau","doi":"10.1109/DRC.1991.664715","DOIUrl":"https://doi.org/10.1109/DRC.1991.664715","url":null,"abstract":"Summary form only given. A description is given of a device which consists of an input rib waveguide, a vertically defined coupler, a vertically coupled mesa p-i-n photodiode (PD), a second coupler, and a second PD, all serially connected. A gold cover on the first coupler ensures that only TE-polarized light is coupled into the first PD; the second coupler/PD pair collects the remaining TM light. Component lengths are 79 and 54 mu m for couplers and 21 and 31 mu m for PDs, for approximately 200- mu m total detector length. The device consists of p-InGaAsP/i-InGaAs/n-InGaAsP PD layers above semi-insulating coupler layers (two GaAsP:Fe guides, InP:Fe cladding). The vertically integrated coupler/detectors are more than an order of magnitude smaller than conventional couplers, and of comparable size to electronic components (e.g. FET gate widths). >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125598191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Shimizu, H. Yamada, S. Murata, A. Tomita, M. Kitamura, A. Suzuki
Summary form only given. Systematic studies on the optical confinement factor dependence of the K-factor, differential gain, and nonlinear gain coefficient in 1.55- mu m MQW and strained MQW lasers are reported. The most important conclusion of these studies is that the K-factors in the MQW and strained MQW lasers are reduced as the optical confinement factor is increased. This mainly results from the increase in the differential gain. Strained MQW lasers with large optical confinement factors are expected to achieve small K-factors and large modulation bandwidths. >
只提供摘要形式。系统地研究了1.55 μ m MQW和应变MQW激光器中k因子、差分增益和非线性增益系数与光约束因子的依赖关系。这些研究最重要的结论是，随着光约束因子的增加，MQW和应变MQW激光器中的k因子减小。这主要是由于差分增益的增加。具有大光约束因子的应变MQW激光器有望实现小k因子和大调制带宽。>
{"title":"Optical Confinement Factor Dependence of K-factor, Differential Gain and Nonlinear Gain in 1.55/spl mu/m Mqw and Strained Mqw Lasers","authors":"J. Shimizu, H. Yamada, S. Murata, A. Tomita, M. Kitamura, A. Suzuki","doi":"10.1109/DRC.1991.664683","DOIUrl":"https://doi.org/10.1109/DRC.1991.664683","url":null,"abstract":"Summary form only given. Systematic studies on the optical confinement factor dependence of the K-factor, differential gain, and nonlinear gain coefficient in 1.55- mu m MQW and strained MQW lasers are reported. The most important conclusion of these studies is that the K-factors in the MQW and strained MQW lasers are reduced as the optical confinement factor is increased. This mainly results from the increase in the differential gain. Strained MQW lasers with large optical confinement factors are expected to achieve small K-factors and large modulation bandwidths. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116700627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Nagarajan, T. Fukushima, J. Bowers, R. Geels, L. Coldren
Summary form only given. The authors report damping factors an order of magnitude lower than previously reported for SQW lasers. They also report bandwidths of 15 GHz obtained in SQW (single quantum well) lasers as a result of proper design of the quantum-well structure. The laser samples were grown on
{"title":"High Speed Single Quantum Well Ingaas/gaas Laser Design and Experiment","authors":"R. Nagarajan, T. Fukushima, J. Bowers, R. Geels, L. Coldren","doi":"10.1109/DRC.1991.664665","DOIUrl":"https://doi.org/10.1109/DRC.1991.664665","url":null,"abstract":"Summary form only given. The authors report damping factors an order of magnitude lower than previously reported for SQW lasers. They also report bandwidths of 15 GHz obtained in SQW (single quantum well) lasers as a result of proper design of the quantum-well structure. The laser samples were grown on","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114423775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：