{"title":"Nonlinear modeling of 4 W 12 mm multi-cell microwave power GaAs MESFET","authors":"Cong Gu, G. Qian, You-Wei Liu","doi":"10.1109/ICSICT.1998.785957","DOIUrl":null,"url":null,"abstract":"Based on the proposed many models for GaAs MESFET, we put forth a newly modified large-signal model for 4 W 12 mm multi-cell microwave power GaAs MESFET in this paper. The newly improved model presented here includes the analytical expressions of I/sub ds/(V/sub gs/, V/sub ds/) elements operating at microwave frequency in large signal. Also comparison with three kinds of the original formula proposed by Materka, Jastrzebski and Curtice, we found that the modified I/sub ds/ in here is more accuracy.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"404 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Based on the proposed many models for GaAs MESFET, we put forth a newly modified large-signal model for 4 W 12 mm multi-cell microwave power GaAs MESFET in this paper. The newly improved model presented here includes the analytical expressions of I/sub ds/(V/sub gs/, V/sub ds/) elements operating at microwave frequency in large signal. Also comparison with three kinds of the original formula proposed by Materka, Jastrzebski and Curtice, we found that the modified I/sub ds/ in here is more accuracy.
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