D. Milovančev, P. Brandl, N. Vokić, B. Goll, K. Schneider-Hornstein, H. Zimmermann
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引用次数: 2
Abstract
Developing paradigm in high speed communication device is heterogeneous 3D integration of electronic components - designed on standard silicon wafers - and photonics, optimized in different processes. This paper shows the advantages of 3D integration and presents the measured results of two receivers fabricated in 0.35 μm SiGe BiCMOS technology. The first is a 10 Gbit/s regulated cascode (RGC) based receiver for optical communications and the second is a 200 Mbit/s TIA for monitoring the operating point of the photonic ring modulator.
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