A simulation based study of NC-FETs design: off-state versus on-state perspective

T. Rollo, H. Wang, G. Han, D. Esseni
{"title":"A simulation based study of NC-FETs design: off-state versus on-state perspective","authors":"T. Rollo, H. Wang, G. Han, D. Esseni","doi":"10.1109/IEDM.2018.8614514","DOIUrl":null,"url":null,"abstract":"This paper presents new analytical and numerical models aiming at a better insight about the physics and design of ferroelectric NC-FETs. We argue that a design focused on the off-state and targeting steep slope with negligible hysteresis is unlikely to be successful. A design targeting an enhanced on-state capacitance is instead more feasible, and can improve both sub-threshold swing and on-current. Also, NC-FETs can reduce the temperature sensitivity compared to baseline FETs, but the sensitivity to dielectrics thickness is critical.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"49 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614514","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

This paper presents new analytical and numerical models aiming at a better insight about the physics and design of ferroelectric NC-FETs. We argue that a design focused on the off-state and targeting steep slope with negligible hysteresis is unlikely to be successful. A design targeting an enhanced on-state capacitance is instead more feasible, and can improve both sub-threshold swing and on-current. Also, NC-FETs can reduce the temperature sensitivity compared to baseline FETs, but the sensitivity to dielectrics thickness is critical.
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基于仿真的nc - fet设计研究:开与关的角度
本文提出了新的分析和数值模型,旨在更好地了解铁电nc - fet的物理和设计。我们认为,一个设计集中在非状态和目标陡坡与可忽略的迟滞是不可能成功的。以增强导通状态电容为目标的设计更可行,并且可以改善亚阈值摆幅和导通电流。此外,与基准fet相比,nc - fet可以降低温度灵敏度,但对介电体厚度的灵敏度至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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