{"title":"A simulation based study of NC-FETs design: off-state versus on-state perspective","authors":"T. Rollo, H. Wang, G. Han, D. Esseni","doi":"10.1109/IEDM.2018.8614514","DOIUrl":null,"url":null,"abstract":"This paper presents new analytical and numerical models aiming at a better insight about the physics and design of ferroelectric NC-FETs. We argue that a design focused on the off-state and targeting steep slope with negligible hysteresis is unlikely to be successful. A design targeting an enhanced on-state capacitance is instead more feasible, and can improve both sub-threshold swing and on-current. Also, NC-FETs can reduce the temperature sensitivity compared to baseline FETs, but the sensitivity to dielectrics thickness is critical.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"49 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614514","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
This paper presents new analytical and numerical models aiming at a better insight about the physics and design of ferroelectric NC-FETs. We argue that a design focused on the off-state and targeting steep slope with negligible hysteresis is unlikely to be successful. A design targeting an enhanced on-state capacitance is instead more feasible, and can improve both sub-threshold swing and on-current. Also, NC-FETs can reduce the temperature sensitivity compared to baseline FETs, but the sensitivity to dielectrics thickness is critical.