S. Schulz, K. Schulze, J. Matusche, U. Schmidt, T. Gessner
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Abstract
It is crucial to apply cap layers with minimum permittivity to ensure a minimum effective k-value of the whole dielectric stack. Therefore, the influence of the deposition of PECVD SiC and SiCN cap layers with k < 5.0 on the electrical and chemical properties of low k dielectric films is the subject of this work.
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