{"title":"Dielectric film deposition by atmospheric pressure and low temperature CVD using TEOS, ozone, and new organometallic doping sources","authors":"Y. Nishimoto, N. Tokumasu, K. Fujino, K. Maeda","doi":"10.1109/VMIC.1989.77998","DOIUrl":null,"url":null,"abstract":"An atmospheric-pressure CVD technology using TEOS, ozone, and new organometallic doping sources, such as tris(trimethylsilil)borate, ((CH/sub 3/)/sub 3/SiO)/sub 3/B, is described. This technology offers excellent dielectric films with respect to step coverage, film stress, moisture resistance, and thermal flow characteristics. Nondoped silicon dioxide and BSG films are deposited to cover conformably even a deeply trenched substrate. They can be used as a dielectric film between a polysilicon and an aluminum layer or between aluminum layers without any planarization process. BPSG films showed good step coverage, and could be smoothly reflowed at a low temperature.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"50 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.77998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
An atmospheric-pressure CVD technology using TEOS, ozone, and new organometallic doping sources, such as tris(trimethylsilil)borate, ((CH/sub 3/)/sub 3/SiO)/sub 3/B, is described. This technology offers excellent dielectric films with respect to step coverage, film stress, moisture resistance, and thermal flow characteristics. Nondoped silicon dioxide and BSG films are deposited to cover conformably even a deeply trenched substrate. They can be used as a dielectric film between a polysilicon and an aluminum layer or between aluminum layers without any planarization process. BPSG films showed good step coverage, and could be smoothly reflowed at a low temperature.<>
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