P. Chevalier, W. Liebl, H. Rücker, A. Gauthier, D. Manger, B. Heinemann, G. Avenier, J. Böck
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引用次数: 48
Abstract
This paper reviews the advantages of SiGe BiCMOS technologies and their applications in the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs and the CMOS nodes is shown. Future perspectives and related main challenges are discussed with a focus on the ongoing European research activities through the presentation of the TARANTO project, whose main objective is to help developing 600 GHz $\pmb{f}_{\mathbf{MAX}}$ nanoscale SiGe BiCMOS platforms.
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