E. Jones, J. Poplawsky, Donavan Leonard, K. Chung, K. Mercurio, P. Brabant, T. Adam, P. Shea, T. Knight
{"title":"Quantification of Dopant Profiles in SiGe HBT Devices","authors":"E. Jones, J. Poplawsky, Donavan Leonard, K. Chung, K. Mercurio, P. Brabant, T. Adam, P. Shea, T. Knight","doi":"10.1109/BCICTS.2018.8551114","DOIUrl":null,"url":null,"abstract":"We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um2) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um2) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551114","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um2) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um2) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.
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