Low parasitic elements and self aligned contacts technology for high frequency bipolar integrated circuits

M. Badila, C. Codreanu, G. Brezeanu, B. Marinescu, A.M. Stoica
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Abstract

A new high performance technology (with low parasitic elements) for high frequency bipolar circuits is proposed. The new technologies upgrade a classical "LISA" (local implantation self aligned) technology using a 14 masks process. The demonstrator circuits are a "Gilbert" cell, and some broad band high frequency amplifiers.
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高频双极集成电路的低寄生元件和自对准触点技术
提出了一种新的高性能(低寄生元件)高频双极电路技术。新技术升级了经典的“LISA”(局部植入自对准)技术,使用14个掩模过程。演示电路是一个“吉尔伯特”单元和一些宽带高频放大器。
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