B. Tudor, G. Brezeanu, M. Badila, M. Locatelli, J. Chante, J. Millán, P. Godignon, A. Lebedev, N. Savkina
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引用次数: 1
Abstract
Our paper reports an optimal parameter extraction method based on a new model for the high frequency capacitance-voltage characteristics of the 6H-SiC boron doped junction. The C-V model confirms the presence of two type regions (p/sup -/ and n/sup -/) in the quasi-intrinsic layer induced by boron doping. The extracted values of the net doping of these zones (6-10/spl times/10/sup 12/ cm/sup -3/) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, about twice the epilayer's width, proves the expansion of the quasi-intrinsic region in the substrate.
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