{"title":"Metallic contacts on porous silicon layers","authors":"A. Angelescu, I. Kleps","doi":"10.1109/SMICND.1998.733775","DOIUrl":null,"url":null,"abstract":"The electrical properties of metallic contacts on porous silicon layers have been investigated with the aim to establish the most suitable contact material and preparation conditions for light emission devices. Different materials as: Au, In, Au-In, In-Sn, Al in a variety of preparation conditions have been used as a solid contact on the PS layers. The experimental I-V characteristics of different metal/PS/Si structures are analyzed by theory of Schottky diodes.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The electrical properties of metallic contacts on porous silicon layers have been investigated with the aim to establish the most suitable contact material and preparation conditions for light emission devices. Different materials as: Au, In, Au-In, In-Sn, Al in a variety of preparation conditions have been used as a solid contact on the PS layers. The experimental I-V characteristics of different metal/PS/Si structures are analyzed by theory of Schottky diodes.
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