{"title":"2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage","authors":"T. Holtij, M. Schwarz, A. Kloes, B. Iñíguez","doi":"10.1109/ULIS.2012.6193362","DOIUrl":null,"url":null,"abstract":"We derived an analytical two-dimensional model to calculate the potential within ultra-scaled junctionless double-gate MOSFETs (DG MOSFETs) valid in subthreshold region. We propose an approach how to calculate the threshold voltage of such devices, and present our first results. Compared to conventional MOSFETs, the proposed junctionless transistor has no pn-junctions. Its type of doping in the channel region is the same as in the source/drain. The device is turned on by creating a conducting channel in the center of the silicon, and turned off by depleting it. To ensure a safe switching behavior, the investigation of the subthreshold region is therefore important. A Comparison of our model with numerical simulation results confirms its validity for ultra-scaled devices having a channel length about 22 nm.","PeriodicalId":350544,"journal":{"name":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","volume":"2 23","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2012.6193362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 31
Abstract
We derived an analytical two-dimensional model to calculate the potential within ultra-scaled junctionless double-gate MOSFETs (DG MOSFETs) valid in subthreshold region. We propose an approach how to calculate the threshold voltage of such devices, and present our first results. Compared to conventional MOSFETs, the proposed junctionless transistor has no pn-junctions. Its type of doping in the channel region is the same as in the source/drain. The device is turned on by creating a conducting channel in the center of the silicon, and turned off by depleting it. To ensure a safe switching behavior, the investigation of the subthreshold region is therefore important. A Comparison of our model with numerical simulation results confirms its validity for ultra-scaled devices having a channel length about 22 nm.
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