{"title":"Expertise, optimisation and control of InP and related technologies by scanning photoluminescence measurements","authors":"S. Krawczyk, K. Schohe, M. Garrigues, J. Tardy","doi":"10.1109/ICIPRM.1990.203023","DOIUrl":null,"url":null,"abstract":"It is shown how scanning photoluminescence (SPL) measurements can be used to obtain information about, to optimize, and to control InP and related compound semiconductor technologies. It is shown how the PL intensity from an InP substrate varies after successive steps during four different passivation processes, and the information gained thereby is discussed. An example is presented to demonstrate how SPL measurements can be used to optimize the gate recess step in the realization of InP MISFETs. Two possibilities for the routine inline control of successive steps in the processing of compound semiconductor devices using SPL measurements are described: automatic recognition and counting of defects appearing on SPL images (most of which cannot be revealed by optical microscopy) and analysis of statistical parameters describing the SPL data.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
It is shown how scanning photoluminescence (SPL) measurements can be used to obtain information about, to optimize, and to control InP and related compound semiconductor technologies. It is shown how the PL intensity from an InP substrate varies after successive steps during four different passivation processes, and the information gained thereby is discussed. An example is presented to demonstrate how SPL measurements can be used to optimize the gate recess step in the realization of InP MISFETs. Two possibilities for the routine inline control of successive steps in the processing of compound semiconductor devices using SPL measurements are described: automatic recognition and counting of defects appearing on SPL images (most of which cannot be revealed by optical microscopy) and analysis of statistical parameters describing the SPL data.<>
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