Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.202996
M. Abdalla, D. Kenneson, W. Powazinik
The growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of lattice-matched InGaAs on InP substrates using tertiarybutylarsine (TBA) as the arsenic source is reported. The grown layers were uniform in composition and are consistently n-type with low background carrier concentration (2-3*10/sup 15//cm/sup 3/). Room temperature mobility as high as 11200 cm/sup 2//V-s with a corresponding 77 K mobility of 57000 cm/sup 2//V-s was measured. Photoluminescence (20 K) gave a strong narrow peak (FWHM=3.1 meV) with no evidence of carbon incorporation.<>
{"title":"MOVPE growth of InGaAs on InP using tertiarybutylarsine","authors":"M. Abdalla, D. Kenneson, W. Powazinik","doi":"10.1109/ICIPRM.1990.202996","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.202996","url":null,"abstract":"The growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of lattice-matched InGaAs on InP substrates using tertiarybutylarsine (TBA) as the arsenic source is reported. The grown layers were uniform in composition and are consistently n-type with low background carrier concentration (2-3*10/sup 15//cm/sup 3/). Room temperature mobility as high as 11200 cm/sup 2//V-s with a corresponding 77 K mobility of 57000 cm/sup 2//V-s was measured. Photoluminescence (20 K) gave a strong narrow peak (FWHM=3.1 meV) with no evidence of carbon incorporation.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117152573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203048
M. Lin, A. Piccirilli, N. Dutta
The fabrication and performance characteristics of buried-facet optical amplifiers are described. Chip gain of >25 dB, gain ripple of <1 dB, and gain difference of <1 dB for TE and TM polarized light are observed. The gain ripple and polarization dependence of gain correlate well with the ripple and polarization dependence of the amplified spontaneous emission spectrum. Although the performance of buried-facet amplifiers is found to be comparable to that of cleaved facet amplifiers with very good antireflection (R<10/sup -4/) coatings, the buried-facet design reduces the requirement on antireflection coatings and makes the fabrication process more reproducible.<>
介绍了埋面光放大器的制作方法和性能特点。芯片增益> 25db，增益纹波>
{"title":"Performance characteristics of buried facet optical amplifiers","authors":"M. Lin, A. Piccirilli, N. Dutta","doi":"10.1109/ICIPRM.1990.203048","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203048","url":null,"abstract":"The fabrication and performance characteristics of buried-facet optical amplifiers are described. Chip gain of >25 dB, gain ripple of <1 dB, and gain difference of <1 dB for TE and TM polarized light are observed. The gain ripple and polarization dependence of gain correlate well with the ripple and polarization dependence of the amplified spontaneous emission spectrum. Although the performance of buried-facet amplifiers is found to be comparable to that of cleaved facet amplifiers with very good antireflection (R<10/sup -4/) coatings, the buried-facet design reduces the requirement on antireflection coatings and makes the fabrication process more reproducible.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127271045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203028
T. Gessert, X. Li, M. Wanlass, T. Coutts
The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<>
{"title":"Progress in the ITO/InP solar cell","authors":"T. Gessert, X. Li, M. Wanlass, T. Coutts","doi":"10.1109/ICIPRM.1990.203028","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203028","url":null,"abstract":"The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125970544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203025
M. Faur, M. Faur, M. Goradia, S. Bailey
An experimental study was conducted in order to select a suitable electrolytic solution and to optimize the anodic dissolution process of InP surface so as to be able to control the thinning of heavily doped surface layers of n/sup +/-p or p/sup +/-n InP structures. Several electrolytic solutions based on HCl, H/sub 3/PO/sub 4/, H/sub 2/SO/sub 4/, HF, CH/sub 3/COOH and H/sub 2/O/sub 2/ were investigated. From the analysis of electrochemical C-V, and I-V characteristics at different DC bias voltages and illumination levels and from scanning electron microscope inspection, it was determined that HF:CH/sub 3/COOH:H/sub 2/O/sub 2/:H/sub 2/O solution is a good candidate for rendering smooth surfaces, free of contamination and with good electrical characteristics, by anodic dissolution of n/sup +/- or p/sup +/-InP front surfaces.<>
{"title":"Anodic dissolution of InP","authors":"M. Faur, M. Faur, M. Goradia, S. Bailey","doi":"10.1109/ICIPRM.1990.203025","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203025","url":null,"abstract":"An experimental study was conducted in order to select a suitable electrolytic solution and to optimize the anodic dissolution process of InP surface so as to be able to control the thinning of heavily doped surface layers of n/sup +/-p or p/sup +/-n InP structures. Several electrolytic solutions based on HCl, H/sub 3/PO/sub 4/, H/sub 2/SO/sub 4/, HF, CH/sub 3/COOH and H/sub 2/O/sub 2/ were investigated. From the analysis of electrochemical C-V, and I-V characteristics at different DC bias voltages and illumination levels and from scanning electron microscope inspection, it was determined that HF:CH/sub 3/COOH:H/sub 2/O/sub 2/:H/sub 2/O solution is a good candidate for rendering smooth surfaces, free of contamination and with good electrical characteristics, by anodic dissolution of n/sup +/- or p/sup +/-InP front surfaces.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126176273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203045
Y. Jeong, G.T. Kim, S.T. Kim
The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of 5.0*10/sup -8/ AA/cm/sup 2/ at 1 V voltage. The breakdown voltage was larger than 30 V. X-ray photoelectron spectra of the P/sub 3/N/sub 5//InP interfaces showed that the reduction of P-O-N compounds at the interface is responsible for the reduction of reverse leakage current and the enhancement of the barrier height.<>
{"title":"A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film","authors":"Y. Jeong, G.T. Kim, S.T. Kim","doi":"10.1109/ICIPRM.1990.203045","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203045","url":null,"abstract":"The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of 5.0*10/sup -8/ AA/cm/sup 2/ at 1 V voltage. The breakdown voltage was larger than 30 V. X-ray photoelectron spectra of the P/sub 3/N/sub 5//InP interfaces showed that the reduction of P-O-N compounds at the interface is responsible for the reduction of reverse leakage current and the enhancement of the barrier height.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114942235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203060
C. Keavney, V. Haven, S. Vernon
InP solar cells with AM0 conversion efficiencies exceeding 19% have been produced by adapting the cell structure to accommodate a high surface recombination velocity. This is done by placing the junction very close the surface and using a front-surface field structure in which the doping increases from the junction to the front surface. Analysis of the quantum efficiency at short wavelengths of cells as a function of junction depth indicates that the surface recombination velocity is high (>10/sup 6/ cm/s), which disagrees with measurements made by other techniques.<>
{"title":"Surface recombination and high efficiency in InP solar cells","authors":"C. Keavney, V. Haven, S. Vernon","doi":"10.1109/ICIPRM.1990.203060","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203060","url":null,"abstract":"InP solar cells with AM0 conversion efficiencies exceeding 19% have been produced by adapting the cell structure to accommodate a high surface recombination velocity. This is done by placing the junction very close the surface and using a front-surface field structure in which the doping increases from the junction to the front surface. Analysis of the quantum efficiency at short wavelengths of cells as a function of junction depth indicates that the surface recombination velocity is high (>10/sup 6/ cm/s), which disagrees with measurements made by other techniques.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114501708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203006
P. Viktorovitch, D. Gallet, M. Gendry, G. Hollinger, K. Schohe, T. Benyattou, A. Tabata, D. Regaud, G. Guillot
The structural and electronic properties of arsenic stabilized InP
砷稳定InP的结构和电子性质
{"title":"Electronic properties of InAs surface quantum wells grown on InP","authors":"P. Viktorovitch, D. Gallet, M. Gendry, G. Hollinger, K. Schohe, T. Benyattou, A. Tabata, D. Regaud, G. Guillot","doi":"10.1109/ICIPRM.1990.203006","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203006","url":null,"abstract":"The structural and electronic properties of arsenic stabilized InP","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"19 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116824348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203021
K. Jiao, A. J. Soltyka, W. Anderson, A. Katz
The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500 degrees C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.<>
利用深层瞬态光谱和 I-V-T 测量方法研究了在不同温度下退火的铂钛/钯砷化镓/氮化铟磷异质结构的电学特性，以评估铂钛欧姆接触和相应的快速热处理 (RTP) 温度对器件性能的影响。结果发现，在 500 摄氏度以上的温度下会诱发 0.89 eV 的新空穴陷阱电平，而在较低温度下则不会。钛的相互扩散被认为是造成这种空穴陷阱的原因。在所有样品中都观察到了活化能分别为 0.61、0.45、0.35 和 0.30 eV 的四个电子陷阱电平，据信它们是 InP 中的原生缺陷。I-V-T 测量结果表明，电流机制与 RTP 温度无关。
{"title":"Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures","authors":"K. Jiao, A. J. Soltyka, W. Anderson, A. Katz","doi":"10.1109/ICIPRM.1990.203021","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203021","url":null,"abstract":"The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500 degrees C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129933085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203018
R. Singh, R. Thakur, A. Katz, A. Nelson, J. Narayan
The use of an in-situ rapid isothermal processor for the in-situ rapid isothermal chemical cleaning of InP, solid phase epitaxial growth of II-A fluorides, and in-situ metallization of InP capacitors is described. InP substrates used in this work were undoped n-type
{"title":"In-situ rapid isothermal processing (RIP) of InP based devices","authors":"R. Singh, R. Thakur, A. Katz, A. Nelson, J. Narayan","doi":"10.1109/ICIPRM.1990.203018","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203018","url":null,"abstract":"The use of an in-situ rapid isothermal processor for the in-situ rapid isothermal chemical cleaning of InP, solid phase epitaxial growth of II-A fluorides, and in-situ metallization of InP capacitors is described. InP substrates used in this work were undoped n-type","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130548107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-04-23DOI: 10.1109/ICIPRM.1990.203053
Z.Q. Shi, Y.S. Lee, W. Anderson
Metal-insulator-InP diodes with Al, Ni, Au, and Pd were fabricated using improved surface passivation techniques. The I-V and barrier height data indicate that a thin thermal oxide between the metal/InP and proximity cap protection during the rapid thermal annealing of the ohmic contact, improve the surface properties as confirmed by deep-level transient spectroscopy, no surface trap being detected. The reactive metals Al and Ni gave a low barrier height due to the reduction of oxide and reaction with InP. The nonreactive metals Au and Pd gave a high barrier height. The modified thermionic emission theory and thermionic field emission theory can be used to explain the conduction mechanisms on Ni and Au MIS diodes. The PD MIS diode exhibited an excess current component at low forward bias, which may be due to interface states.<>
{"title":"Improved thermal processing of MOS diodes on n-InP","authors":"Z.Q. Shi, Y.S. Lee, W. Anderson","doi":"10.1109/ICIPRM.1990.203053","DOIUrl":"https://doi.org/10.1109/ICIPRM.1990.203053","url":null,"abstract":"Metal-insulator-InP diodes with Al, Ni, Au, and Pd were fabricated using improved surface passivation techniques. The I-V and barrier height data indicate that a thin thermal oxide between the metal/InP and proximity cap protection during the rapid thermal annealing of the ohmic contact, improve the surface properties as confirmed by deep-level transient spectroscopy, no surface trap being detected. The reactive metals Al and Ni gave a low barrier height due to the reduction of oxide and reaction with InP. The nonreactive metals Au and Pd gave a high barrier height. The modified thermionic emission theory and thermionic field emission theory can be used to explain the conduction mechanisms on Ni and Au MIS diodes. The PD MIS diode exhibited an excess current component at low forward bias, which may be due to interface states.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123679256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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