E.R. Garcia, N. Zerounian, F. Aniel, M. Aguilar, B. Barbalat, P. Chevalier, A. Chantre
{"title":"Germanium profile, graduality and base doping level influences in the performance of SiGe HBT","authors":"E.R. Garcia, N. Zerounian, F. Aniel, M. Aguilar, B. Barbalat, P. Chevalier, A. Chantre","doi":"10.1109/ISDRS.2007.4422469","DOIUrl":null,"url":null,"abstract":"In this paper, results are presented for eight samples. The investigated SiGe HBTs are compatible with the CMOS core process. They are based on a double poly-silicon technology (base and emitter), use a fully self aligned architecture (FSA emitter-base and collector-base junctions) and selective base epitaxy (SEG) with carbon incorporation.","PeriodicalId":379313,"journal":{"name":"2007 International Semiconductor Device Research Symposium","volume":"45 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Semiconductor Device Research Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2007.4422469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper, results are presented for eight samples. The investigated SiGe HBTs are compatible with the CMOS core process. They are based on a double poly-silicon technology (base and emitter), use a fully self aligned architecture (FSA emitter-base and collector-base junctions) and selective base epitaxy (SEG) with carbon incorporation.
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