{"title":"A non-linear TCAD large signal model to enhance the linearity of transistor","authors":"A. Kashif, C. Svensson, S. Azam, Q. Wahab","doi":"10.1109/ISDRS.2007.4422546","DOIUrl":null,"url":null,"abstract":"In this paper, the proposed technique can be used to study the internal device non-linearity by TCAD device level simulations to enhance the device performance by physical structure/doping.","PeriodicalId":379313,"journal":{"name":"2007 International Semiconductor Device Research Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Semiconductor Device Research Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2007.4422546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the proposed technique can be used to study the internal device non-linearity by TCAD device level simulations to enhance the device performance by physical structure/doping.
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