Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector

A. Yamada, M. Sakuraba, J. Murota, K. Wada, L. Kimerling
{"title":"Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector","authors":"A. Yamada, M. Sakuraba, J. Murota, K. Wada, L. Kimerling","doi":"10.1109/GROUP4.2004.1416706","DOIUrl":null,"url":null,"abstract":"For light propagation in Si nitride optical waveguides with various width, bending loss is evaluated, and the bending radius dependence is clarified using a pair of Si p-i-n diodes integrated on Si substrate.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416706","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

For light propagation in Si nitride optical waveguides with various width, bending loss is evaluated, and the bending radius dependence is clarified using a pair of Si p-i-n diodes integrated on Si substrate.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Si -i-n二极管集成光发射器和检测器的氮化硅光波导传输特性
对于光在不同宽度的氮化硅光波导中的传播,计算了弯曲损耗,并利用集成在硅衬底上的一对硅p-i-n二极管澄清了弯曲半径的依赖关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Strain of the micro-sized cone-shape GeSi alloy film determined by Raman scattering Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors 470 nm LED-pumped optical waveguide amplifier based on nanocrystal-Si sensitized, Er-doped silica Growth mechanism of GeSi quantum rings on Si [001]
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1