Pub Date : 2004-12-01DOI: 10.1109/GROUP4.2004.1416680
C. Chia, L.J. Chen, V. Mashanov, H. Cheng
We present the micro-Raman study of curved Ge/sub x/Si/sub 1-x//Ge/sub y/Si/sub 1-y/ heterostructure, and found the strain of the curved thin layer is proportional to the curvature, i.e. inversely proportional to the diameter.
{"title":"Strain of the micro-sized cone-shape GeSi alloy film determined by Raman scattering","authors":"C. Chia, L.J. Chen, V. Mashanov, H. Cheng","doi":"10.1109/GROUP4.2004.1416680","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416680","url":null,"abstract":"We present the micro-Raman study of curved Ge/sub x/Si/sub 1-x//Ge/sub y/Si/sub 1-y/ heterostructure, and found the strain of the curved thin layer is proportional to the curvature, i.e. inversely proportional to the diameter.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122927924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416651
J. Kouvetakis, J. Tolle, J. Menéndez
We will discuss CVD growth, characterization and properties of novel Ge/sub 1-z/Sn/sub z//Ge/sub 1-x-y/Si/sub x/Sn/sub y/ heterostructures on Si(100). The Ge/sub 1-x-y/Si/sub x/Sn/sub y/ system provides independent strain and bandgap engineering to achieve structures that may lead to novel photonic group-IV devices.
{"title":"New IR semiconductors in the Si-Ge-Sn system","authors":"J. Kouvetakis, J. Tolle, J. Menéndez","doi":"10.1109/GROUP4.2004.1416651","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416651","url":null,"abstract":"We will discuss CVD growth, characterization and properties of novel Ge/sub 1-z/Sn/sub z//Ge/sub 1-x-y/Si/sub x/Sn/sub y/ heterostructures on Si(100). The Ge/sub 1-x-y/Si/sub x/Sn/sub y/ system provides independent strain and bandgap engineering to achieve structures that may lead to novel photonic group-IV devices.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129141218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416645
J. Kolodzey, P. Lv, R. Troeger, S. Kim
This study proposes a different approach of much simpler THz emitters based on radiative impurity transitions in doped silicon devices fabricated without Ge alloying. This work has gathered the electroluminescence at 4.2 K from a boron doped sample. The current versus voltage characteristics are measured at the same pulse conditions using an inductive probe and oscilloscope.
{"title":"Terahertz emitting devices based on dopant transitions in silicon","authors":"J. Kolodzey, P. Lv, R. Troeger, S. Kim","doi":"10.1109/GROUP4.2004.1416645","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416645","url":null,"abstract":"This study proposes a different approach of much simpler THz emitters based on radiative impurity transitions in doped silicon devices fabricated without Ge alloying. This work has gathered the electroluminescence at 4.2 K from a boron doped sample. The current versus voltage characteristics are measured at the same pulse conditions using an inductive probe and oscilloscope.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132755008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416638
M. Lipson
This paper discusses the state of the art as well as the approach for light coupling, switching and modulating on Si. These results are based on sub-micron highly confined structures. It is primarily this principle, of manipulating light by confinement, that has enabled light control and coupling on silicon using ultra-compact structures.
{"title":"Controlling light on a microelectronics' chip: solving the coupling, modulation and switching challenges","authors":"M. Lipson","doi":"10.1109/GROUP4.2004.1416638","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416638","url":null,"abstract":"This paper discusses the state of the art as well as the approach for light coupling, switching and modulating on Si. These results are based on sub-micron highly confined structures. It is primarily this principle, of manipulating light by confinement, that has enabled light control and coupling on silicon using ultra-compact structures.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115403543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416655
J. Cui, F. Xue, J. Qin, Y. L. Fan, X.J. Yang, Z. Jiang
This study performs experiments on ultrathin Si capping on Ge quantum dots at varying growth temperature to clarify the growth details of GeSi quantum rings on Si [001]. Results show that at a lower temperature of 400/spl deg/C with several angstroms thick Si capping, the shape of dots remains domed, but at a higher temperature of 640/spl deg/C, the shape changes from dome to pyramid. This phenomenon shows that the shape transition is highly dependent on temperature and Ge atom diffusion and Ge atom segregation play an important role in quantum ring formation. This is confirmed by the results of grazing incidence X-ray diffraction.
{"title":"Growth mechanism of GeSi quantum rings on Si [001]","authors":"J. Cui, F. Xue, J. Qin, Y. L. Fan, X.J. Yang, Z. Jiang","doi":"10.1109/GROUP4.2004.1416655","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416655","url":null,"abstract":"This study performs experiments on ultrathin Si capping on Ge quantum dots at varying growth temperature to clarify the growth details of GeSi quantum rings on Si [001]. Results show that at a lower temperature of 400/spl deg/C with several angstroms thick Si capping, the shape of dots remains domed, but at a higher temperature of 640/spl deg/C, the shape changes from dome to pyramid. This phenomenon shows that the shape transition is highly dependent on temperature and Ge atom diffusion and Ge atom segregation play an important role in quantum ring formation. This is confirmed by the results of grazing incidence X-ray diffraction.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"250 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114464305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416650
E. Sargent
We review devices, fabricated using room-temperature solution spin-casting compatible with silicon post-processing, which produce, detect, modulate, and process optical signals in the spectral range from 1200-1700 nm. We first summarize the synthesis of PbS (lead sulphide) quantum dot nanocrystals 2-10 nm in diameter by solution chemistry. We then discusses the realization to date of solution-processed, silicon-compatible thin-film devices fabricated using these materials.
{"title":"Towards CMOS-compatible, solution-processed quantum dot nanocrystal optical sources, modulators, detectors, and optical signal processing elements across the extended communications band 1200-1700 nm","authors":"E. Sargent","doi":"10.1109/GROUP4.2004.1416650","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416650","url":null,"abstract":"We review devices, fabricated using room-temperature solution spin-casting compatible with silicon post-processing, which produce, detect, modulate, and process optical signals in the spectral range from 1200-1700 nm. We first summarize the synthesis of PbS (lead sulphide) quantum dot nanocrystals 2-10 nm in diameter by solution chemistry. We then discusses the realization to date of solution-processed, silicon-compatible thin-film devices fabricated using these materials.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128597248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416734
P. Chow, Jian-Xin Dong, S. Zaytsev, A. Osinsky, B. Hertog
Fabrication of Er doped materials deposited on silicon into LED is demonstrated. A strong infrared luminescence is observed at 1540 nm wavelength region. They also have potential applications for planar optical communication.
{"title":"Silicon-based rare earth-doped materials and devices grown by MBE","authors":"P. Chow, Jian-Xin Dong, S. Zaytsev, A. Osinsky, B. Hertog","doi":"10.1109/GROUP4.2004.1416734","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416734","url":null,"abstract":"Fabrication of Er doped materials deposited on silicon into LED is demonstrated. A strong infrared luminescence is observed at 1540 nm wavelength region. They also have potential applications for planar optical communication.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123015836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416736
Jinku Lee, J. Shin, N. Park
We demonstrate optical gain at 1.5 /spl mu/m in Si nanocrystal-sensitized, Er-doped silica waveguide using a commercial, low-cost 470 nm LED array in top-pumping configuration. Experimental evidence of full inversion with maximum possible gain of 3 dB/cm is presented.
{"title":"470 nm LED-pumped optical waveguide amplifier based on nanocrystal-Si sensitized, Er-doped silica","authors":"Jinku Lee, J. Shin, N. Park","doi":"10.1109/GROUP4.2004.1416736","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416736","url":null,"abstract":"We demonstrate optical gain at 1.5 /spl mu/m in Si nanocrystal-sensitized, Er-doped silica waveguide using a commercial, low-cost 470 nm LED array in top-pumping configuration. Experimental evidence of full inversion with maximum possible gain of 3 dB/cm is presented.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114188594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416719
T. Mitze, M. Schnarrenberger, L. Zimmermann, J. Bruns, F. Fidorra, F. Kreissl, K. Janiak, H. Heidrich, K. Petermann
A concept for a SOI motherboard is introduced. AuSn solder technology is used for hybrid integration. The device adjustment on the board is realised by passive self-alignment. First results on fabricated boards are very encouraging.
{"title":"A new and simple concept for self-aligned hybrid integration in silicon on insulator (SOI)","authors":"T. Mitze, M. Schnarrenberger, L. Zimmermann, J. Bruns, F. Fidorra, F. Kreissl, K. Janiak, H. Heidrich, K. Petermann","doi":"10.1109/GROUP4.2004.1416719","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416719","url":null,"abstract":"A concept for a SOI motherboard is introduced. AuSn solder technology is used for hybrid integration. The device adjustment on the board is realised by passive self-alignment. First results on fabricated boards are very encouraging.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122404963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416677
R. Mao, C.B. Li, Y. Zuo, B. Cheng, X. Teng, L. Luo, J.Z. Yu, Q.M. Wang
Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3/spl sim/1.6 /spl mu/m were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained.
{"title":"Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors","authors":"R. Mao, C.B. Li, Y. Zuo, B. Cheng, X. Teng, L. Luo, J.Z. Yu, Q.M. Wang","doi":"10.1109/GROUP4.2004.1416677","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416677","url":null,"abstract":"Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3/spl sim/1.6 /spl mu/m were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114100855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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