{"title":"A simulation study of N-shell silicon nanowires as biological sensors","authors":"S. Rigante, P. Livi, A. Hierlemann, A. Ionescu","doi":"10.1109/ULIS.2011.5758003","DOIUrl":null,"url":null,"abstract":"Two different silicon nanowire (SiNW) based devices are discussed as potential ion and biological sensors. Three-dimensional TCAD simulations are used to investigate and compare the efficiency of such devices upon applying an external voltage difference of ΔVg = 50 mV. The simulation results presented in this work reveal that an n-doped shell acts as sensitivity booster for uniformly doped SiNWs. It is demonstrated that a 10 nm n-type shell surrounding a p-type core can produce a sensitivity enhancement of more than 50%.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ulis 2011 Ultimate Integration on Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2011.5758003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Two different silicon nanowire (SiNW) based devices are discussed as potential ion and biological sensors. Three-dimensional TCAD simulations are used to investigate and compare the efficiency of such devices upon applying an external voltage difference of ΔVg = 50 mV. The simulation results presented in this work reveal that an n-doped shell acts as sensitivity booster for uniformly doped SiNWs. It is demonstrated that a 10 nm n-type shell surrounding a p-type core can produce a sensitivity enhancement of more than 50%.
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