{"title":"Beyond refractive optical lithography next generation lithography \"What's after 193 nm?\"","authors":"P. Seidel, J. Canning, S. Mackay","doi":"10.1109/IEMT.1997.626940","DOIUrl":null,"url":null,"abstract":"The integrated circuit industry growth will continue to rely on microlithography as a key enabler to drive chip productivity. Current optical lithography methods (i.e. 193 nm) have been projected to have resolving power down to 130 nm CD generation nodes. Beyond this capability there is a strong consensus that a \"Next Generation Lithography\" (NGL) technology will be needed to continue along SIA Roadmap timelines. Many NGL technologies are candidates for sub-130 nm CD manufacturing. Choosing the technology path with partial data and limited resources by YE 1997 to meet 130 nm/2003 and 100 nm/2007 generation nodes will require a consensus (international) decision process methodology.","PeriodicalId":227971,"journal":{"name":"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium","volume":"67 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1997.626940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The integrated circuit industry growth will continue to rely on microlithography as a key enabler to drive chip productivity. Current optical lithography methods (i.e. 193 nm) have been projected to have resolving power down to 130 nm CD generation nodes. Beyond this capability there is a strong consensus that a "Next Generation Lithography" (NGL) technology will be needed to continue along SIA Roadmap timelines. Many NGL technologies are candidates for sub-130 nm CD manufacturing. Choosing the technology path with partial data and limited resources by YE 1997 to meet 130 nm/2003 and 100 nm/2007 generation nodes will require a consensus (international) decision process methodology.
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