A 5 to 18GHz, 10W GaN Power Amplifier Using Non-Distributed Approach

R. S. N'Gongo, G. Ujwala, K. Suman, K. Y. Varma, Ch.S.M. Jyothi, Pramod K. Singh
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引用次数: 2

Abstract

This contribution deals with the design of a wideband 10W power amplifier based on non-distributed approach using 0.25 $\mu$m AlGaN/GaN on SiC substrate. Due to the moderate power density of the process, the power amplifier has been designed using the non-distributed (conventional common source) approach with class AB operation. Thus, Gain flatness and output power and PAE become hard to maintain throughout the frequency bandwidth in non-distributed topology. Fabricated Power amplifier exhibits a power gain of 5dB and greater than 10W of saturated Power.
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一种采用非分布式方法的5 ~ 18GHz, 10W GaN功率放大器
该贡献涉及基于非分布式方法的宽带10W功率放大器的设计,该放大器在SiC衬底上使用0.25 $\mu$m的AlGaN/GaN。由于该工艺的功率密度适中,功率放大器采用非分布式(传统的共源)方法设计,工作等级为AB级。因此,在非分布式拓扑中,增益平坦度、输出功率和PAE难以在整个带宽范围内保持。该功率放大器的功率增益为5dB,饱和功率大于10W。
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