Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909574
Babak Jamali, A. Babakhani
This paper presents a broadband millimetre-wave coherent detector that uses an on-chip frequency comb with a tunable repetition frequency as a high-precision frequency ruler. A heterodyne MOSFET detector mixes the received signal with the reference comb and downconverts it to an intermediate-frequency signal below 2 GHz. The receiver is able to detect signals from 30 to 160 GHz with a 2-Hz resolution. The detector chip is fabricated in TSMC 65-nm CMOS technology, occupies an area of 0.56 mm2, and consumes 34 mW dc power.
{"title":"A Fully Integrated 30-to-160GHz Coherent Detector with a Broadband Frequency Comb in 65nm CMOS","authors":"Babak Jamali, A. Babakhani","doi":"10.23919/EuMIC.2019.8909574","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909574","url":null,"abstract":"This paper presents a broadband millimetre-wave coherent detector that uses an on-chip frequency comb with a tunable repetition frequency as a high-precision frequency ruler. A heterodyne MOSFET detector mixes the received signal with the reference comb and downconverts it to an intermediate-frequency signal below 2 GHz. The receiver is able to detect signals from 30 to 160 GHz with a 2-Hz resolution. The detector chip is fabricated in TSMC 65-nm CMOS technology, occupies an area of 0.56 mm2, and consumes 34 mW dc power.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"61 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120851862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909646
Ryota Komaru, M. Hangai, T. Morimoto, S. Shinjo
A compact and broadband bridged-T phase shifter has been developed. The proposed circuit is based on a HPF/LPF phase shifter with a bridged-T circuit topology. The phase shifting circuit eliminates the SPDT switches to minimize the circuit size while keeping broadband performances. To verify this methodology, we have fabricated an 11.25deg. MMIC phase shifter whose size is 0.14mm2. The phase shifter has achieved the insertion loss of 1.2dB, and the phase shift of 11.25deg. +/-1.5deg. in 6-16GHz band. An X-band 5-bit MMIC phase shifter has also been fabricated, and achieved RMS phase error of 6deg. in 7.510.5GHz band with the chip size of 2.5mm2.
{"title":"A Compact and Broadband Phase Shifter with Bridged-T Circuit Topology","authors":"Ryota Komaru, M. Hangai, T. Morimoto, S. Shinjo","doi":"10.23919/EuMIC.2019.8909646","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909646","url":null,"abstract":"A compact and broadband bridged-T phase shifter has been developed. The proposed circuit is based on a HPF/LPF phase shifter with a bridged-T circuit topology. The phase shifting circuit eliminates the SPDT switches to minimize the circuit size while keeping broadband performances. To verify this methodology, we have fabricated an 11.25deg. MMIC phase shifter whose size is 0.14mm2. The phase shifter has achieved the insertion loss of 1.2dB, and the phase shift of 11.25deg. +/-1.5deg. in 6-16GHz band. An X-band 5-bit MMIC phase shifter has also been fabricated, and achieved RMS phase error of 6deg. in 7.510.5GHz band with the chip size of 2.5mm2.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126083397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909597
Aritra Roy, K. Vinoy
A composite structure consisting of an array of reconfigurable unit cells and an antenna is proposed for the media-based modulation (MBM) scheme which is one type of spatial modulation technique. In MBM, a single tone is transmitted by the antenna and channel fading coefficients at the receivers are decoded as alphabets. The proposed screen is inspired by the reconfigurable frequency selective surface and the transmission is varied by selectively toggling the switches of individual unit cells to realize different channel fading coefficients for communication. The measured results at several preset states of the array validate this idea and the corresponding scatter and bit-error rate (BER) plots are calculated from the measured complex radiation patterns, which demonstrates its feasibility for the modulation schemes.
{"title":"A Reconfigurable Array for Media Based Spatial Modulation","authors":"Aritra Roy, K. Vinoy","doi":"10.23919/EuMIC.2019.8909597","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909597","url":null,"abstract":"A composite structure consisting of an array of reconfigurable unit cells and an antenna is proposed for the media-based modulation (MBM) scheme which is one type of spatial modulation technique. In MBM, a single tone is transmitted by the antenna and channel fading coefficients at the receivers are decoded as alphabets. The proposed screen is inspired by the reconfigurable frequency selective surface and the transmission is varied by selectively toggling the switches of individual unit cells to realize different channel fading coefficients for communication. The measured results at several preset states of the array validate this idea and the corresponding scatter and bit-error rate (BER) plots are calculated from the measured complex radiation patterns, which demonstrates its feasibility for the modulation schemes.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128755360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909441
M. Furqan, Faisal Ahmed, A. Stelzer
In this paper, we present a fully-integrated frequency-modulated continuous-wave radar transceiver working in the D-band. The transceiver is equipped with two receivers and one transmitter. The transmitter is based on a high-speed quadrature-phase-shift-keying modulator and each of the two receivers is based on a fully-differential I/Q receiver. The radar sensor can be operated in a single-input multiple-output configuration to perform Doppler, range, and angular measurements. The D-band quadrature signals for the transmitter and the two receivers are generated using transmission-line based hybrid couplers. The transceiver utilizes a $times 6$ frequency multiplier chain with state-of-the-art power-added-efficiency and conversion gain of 3% and 27dB, respectively. The transmitter has a measured peak output power of around 13dBm at 122GHz, which is the highest reported power for Si-based D-band radar sensors. The receivers are designed to be tolerant to high transmitter leakage signals and provide a measured conversion gain of around 14dB. The entire transceiver runs on 1.8V and 3.3V supply voltage has a DC power consumption of 1.2W. The chip size is 3mm $times 3$ mm.
{"title":"A D-band Fully-Integrated 2-RX, 1-TX FMCW Radar Sensor with 13dBm Output Power","authors":"M. Furqan, Faisal Ahmed, A. Stelzer","doi":"10.23919/EuMIC.2019.8909441","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909441","url":null,"abstract":"In this paper, we present a fully-integrated frequency-modulated continuous-wave radar transceiver working in the D-band. The transceiver is equipped with two receivers and one transmitter. The transmitter is based on a high-speed quadrature-phase-shift-keying modulator and each of the two receivers is based on a fully-differential I/Q receiver. The radar sensor can be operated in a single-input multiple-output configuration to perform Doppler, range, and angular measurements. The D-band quadrature signals for the transmitter and the two receivers are generated using transmission-line based hybrid couplers. The transceiver utilizes a $times 6$ frequency multiplier chain with state-of-the-art power-added-efficiency and conversion gain of 3% and 27dB, respectively. The transmitter has a measured peak output power of around 13dBm at 122GHz, which is the highest reported power for Si-based D-band radar sensors. The receivers are designed to be tolerant to high transmitter leakage signals and provide a measured conversion gain of around 14dB. The entire transceiver runs on 1.8V and 3.3V supply voltage has a DC power consumption of 1.2W. The chip size is 3mm $times 3$ mm.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130600993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909486
S. Kurokawa, M. Hirose, S. Murata, Tsutomu Mitui
We have already developed a low-cost type microwave receiving system using very low-cost optical fiber link system. Our developed system consists of 850 nm vertical-cavity surface-emitting laser, a photo diode with trans-impedance amplifier and OM3 multi-mode optical fiber. Using bi-directional setup of our developed optical fiber link system and microwave directional coupler, we can measure a transmission coefficient and reflection coefficient for device under test in full 2-port calibration of vector network analyzer. In this paper, we show a measurement result of the refection coefficient and receiving coefficient of step attenuator up to 18 GHz. Our developed system can be measured the microwave device performance from 6 GHz to 16 GHz with 50 dB dynamic range and less than 0.5 dB linearity without temperature control and pre-amplifier.
{"title":"Simple Microwave Measurement System Using Bi-Directional Configuration of VCSEL and PD-TIA from 6 to 16 GHz","authors":"S. Kurokawa, M. Hirose, S. Murata, Tsutomu Mitui","doi":"10.23919/EuMIC.2019.8909486","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909486","url":null,"abstract":"We have already developed a low-cost type microwave receiving system using very low-cost optical fiber link system. Our developed system consists of 850 nm vertical-cavity surface-emitting laser, a photo diode with trans-impedance amplifier and OM3 multi-mode optical fiber. Using bi-directional setup of our developed optical fiber link system and microwave directional coupler, we can measure a transmission coefficient and reflection coefficient for device under test in full 2-port calibration of vector network analyzer. In this paper, we show a measurement result of the refection coefficient and receiving coefficient of step attenuator up to 18 GHz. Our developed system can be measured the microwave device performance from 6 GHz to 16 GHz with 50 dB dynamic range and less than 0.5 dB linearity without temperature control and pre-amplifier.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"47-48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114810251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909536
Muhsin Ali, A. Jankowski, R. Guzman, L. G. Muñoz, F. van Dijk, G. Carpintero
In this paper we report a broadband photonics-based transmitter module for wireless communications in the E-Band frequency range (60 – 90 GHz). It is composed of a highspeed Uni-Traveling Carrier Photodiode (UTC-PD) coupled to a highly directive (14 dBi) broadband planar end-fire antenna using hybrid optoelectronic integration. Measurements show that the proposed emitter module yields a maximum radiated power of -6 dBm and a 3-dB frequency bandwidth of almost 30 GHz, widest ever achieved for an E-band device of this kind. Finally, we demonstrate the performance with an error-free 3 Gbps real-time data transmission wireless link. The novel approach presented enables further development towards the realization of a planar photonic phased antenna array.
{"title":"Photonics-based Compact Broadband Transmitter Module for E-band Wireless Communications","authors":"Muhsin Ali, A. Jankowski, R. Guzman, L. G. Muñoz, F. van Dijk, G. Carpintero","doi":"10.23919/EuMIC.2019.8909536","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909536","url":null,"abstract":"In this paper we report a broadband photonics-based transmitter module for wireless communications in the E-Band frequency range (60 – 90 GHz). It is composed of a highspeed Uni-Traveling Carrier Photodiode (UTC-PD) coupled to a highly directive (14 dBi) broadband planar end-fire antenna using hybrid optoelectronic integration. Measurements show that the proposed emitter module yields a maximum radiated power of -6 dBm and a 3-dB frequency bandwidth of almost 30 GHz, widest ever achieved for an E-band device of this kind. Finally, we demonstrate the performance with an error-free 3 Gbps real-time data transmission wireless link. The novel approach presented enables further development towards the realization of a planar photonic phased antenna array.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126207149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909508
R. Ciocoveanu, R. Weigel, A. Hagelauer, V. Issakov
This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for short range radar applications, realized in a 28nm bulk CMOS technology. Measurement results show a saturated output power $(mathrm{P}_{sat})$ of 11.9dBm with a 20.7% power-added efficiency (PAE) at 60GHz. Moreover, the measurements show that for a frequency range from 57GHz to 64GHz, the Psat varies from 10.5dBm to 11.2dBm and the circuit draws 26mA from a 0.9V power supply. Furthermore, the fabricated chip has an area of 0.61mm x 0.31mm including the pads.
本文提出了一种高效的3级差分b类功率放大器(PA)，用于近距离雷达应用，采用28nm块体CMOS技术实现。测量结果表明，在60GHz时，饱和输出功率$( mathm {P}_{sat})$为11.9dBm，功率附加效率(PAE)为20.7%。此外，测量表明，在57GHz到64GHz的频率范围内，Psat在10.5dBm到11.2dBm之间变化，电路从0.9V电源中吸收26mA。此外，该芯片的面积为0.61mm x 0.31mm(包括焊盘)。
{"title":"A 20.7% PAE 3-Stage 60GHz Power Amplifier for Radar Applications in 28nm Bulk CMOS","authors":"R. Ciocoveanu, R. Weigel, A. Hagelauer, V. Issakov","doi":"10.23919/EuMIC.2019.8909508","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909508","url":null,"abstract":"This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for short range radar applications, realized in a 28nm bulk CMOS technology. Measurement results show a saturated output power $(mathrm{P}_{sat})$ of 11.9dBm with a 20.7% power-added efficiency (PAE) at 60GHz. Moreover, the measurements show that for a frequency range from 57GHz to 64GHz, the Psat varies from 10.5dBm to 11.2dBm and the circuit draws 26mA from a 0.9V power supply. Furthermore, the fabricated chip has an area of 0.61mm x 0.31mm including the pads.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131800263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909599
S. Koziel, A. Pietrenko‐Dabrowska
Design of miniaturized microstrip circuits is heavily based on full-wave electromagnetic (EM) simulation tools. This is especially the case for components involving slow-wave compact cells, in which considerable EM cross-coupling effects cannot be adequately accounted for using simpler representations, e.g., equivalent network models. In this paper, a gradient-based procedure with numerical derivatives for accelerated optimization of miniaturized impedance matching transformers in highly-dimensional parameter spaces is proposed. Our approach allows for reducing the number of expensive EM simulations in the course of the optimization process by restricting the use of finite differentiation. This is achieved through a selective execution of a Broyden formula, applied for parameters that satisfy appropriately defined alignment conditions w.r.t. design relocation between the algorithm iterations. Furthermore, to facilitate handling of circuits of various complexities, the acceptance criteria for the mentioned alignment verification are made dependent on the search space dimensionality. The presented methodology is validated using three compact impedance matching transformers. A demonstrated computational speedup is as high as fifty percent as compared to the reference algorithm.
{"title":"Reduced-Cost Gradient-Based optimization of Compact Impedance Matching Transformers in Highly-Dimensional Parameters Spaces","authors":"S. Koziel, A. Pietrenko‐Dabrowska","doi":"10.23919/EuMIC.2019.8909599","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909599","url":null,"abstract":"Design of miniaturized microstrip circuits is heavily based on full-wave electromagnetic (EM) simulation tools. This is especially the case for components involving slow-wave compact cells, in which considerable EM cross-coupling effects cannot be adequately accounted for using simpler representations, e.g., equivalent network models. In this paper, a gradient-based procedure with numerical derivatives for accelerated optimization of miniaturized impedance matching transformers in highly-dimensional parameter spaces is proposed. Our approach allows for reducing the number of expensive EM simulations in the course of the optimization process by restricting the use of finite differentiation. This is achieved through a selective execution of a Broyden formula, applied for parameters that satisfy appropriately defined alignment conditions w.r.t. design relocation between the algorithm iterations. Furthermore, to facilitate handling of circuits of various complexities, the acceptance criteria for the mentioned alignment verification are made dependent on the search space dimensionality. The presented methodology is validated using three compact impedance matching transformers. A demonstrated computational speedup is as high as fifty percent as compared to the reference algorithm.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"478 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126598143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909492
C. Wilson, A. Zhu, J. King
This paper describes a simple approach to dispersion modelling in GaN transistor devices. This technique accounts for the effects of trap-related dispersion on the dynamic nonlinearities i.e. the gate capacitances, in addition to the well-known dispersion of the drain-source current. Using pulsed-bias S-parameters, capacitance surfaces are extracted across the pulsed-IV plane, with the 2D capacitance surface parametrised by the quiescent bias point. Filter networks allow the model to dynamically determine the quiescent bias, ensuring the correct capacitance surface is used according to the slowly-changing state dynamics. This technique provides a model that is capable of producing two distinct sets of S-parameters, depending on whether dc or pulsed biasing is used. The modelling approach is verified up to 40 GHz on a GaN HEMT device, pulsing across the bias plane. Results show good prediction of both the dc and pulsed S-parameter measurements, from a single global model. The importance of extracting elements based on pulsed S-parameter measurements rather than dc S-parameter measurements is made clear through large-signal measurements and simulations.
{"title":"Intrinsic Capacitance Extraction from Pulsed S-parameters","authors":"C. Wilson, A. Zhu, J. King","doi":"10.23919/EuMIC.2019.8909492","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909492","url":null,"abstract":"This paper describes a simple approach to dispersion modelling in GaN transistor devices. This technique accounts for the effects of trap-related dispersion on the dynamic nonlinearities i.e. the gate capacitances, in addition to the well-known dispersion of the drain-source current. Using pulsed-bias S-parameters, capacitance surfaces are extracted across the pulsed-IV plane, with the 2D capacitance surface parametrised by the quiescent bias point. Filter networks allow the model to dynamically determine the quiescent bias, ensuring the correct capacitance surface is used according to the slowly-changing state dynamics. This technique provides a model that is capable of producing two distinct sets of S-parameters, depending on whether dc or pulsed biasing is used. The modelling approach is verified up to 40 GHz on a GaN HEMT device, pulsing across the bias plane. Results show good prediction of both the dc and pulsed S-parameter measurements, from a single global model. The importance of extracting elements based on pulsed S-parameter measurements rather than dc S-parameter measurements is made clear through large-signal measurements and simulations.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130960760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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