Direct Etching of High Aspect Ratio Structures Through a Stencil

Abstract

This paper reports the feasibility of the fabrication of high aspect ratio structures on substrates via dry etching through a stencil mask placed onto the sample. It demonstrates the possibility to use standard equipment and processes with this novel masking technique, which allows the patterning of fragile and pre-structured surfaces, and avoids the use of resist or additional coating of the sample, reducing costs and processing time. Aspect ratios as high as 13:1 and pattern transfer with a gap of 100 ¿m are demonstrated.