Supercritical Fluid Deposition (SCFD) Technique as a Novel Tool for MEMS Fabrication

T. Momose, T. Ohkubo, T. Uejima, T. Saito, M. Sugiyama, Y. Shimogaki
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引用次数: 1

Abstract

In the present paper, supercritical fluid deposition (SCFD) process is proposed for making functional films and coatings on the surface of MEMS devices. SCFD can provide superior step coverage on to high aspect ratio features at relatively low temperature. It also provides possibility to deposit wide variety of materials, including metals, oxides, and organic compounds, with controllability of substrate selectivity. For example, pure Cu was conformally dposited onto high aspect ratio vias for ULSI interconnects with 50nm in diameter and 1¿m in depth at 220 °C. The Cu-SCFD process is a selective process, which can deposit Cu film only on conductive surface, however, non-selective deposition of Cu is also possible by using CuMnOx as a buffer layer between Cu and insulative substrate. SiO2 film was conformally fabricated in high aspect ratio trenches with 500 nm in width and 5 ¿m in depth at 200 °C. Biocompatible poly ethylene glycol monomethacrylate (PEGMA) was grafted onto the surface of micro-channel with aspect ratio of 2500 at 80 °C, and proved effective protection of protein adsorption onto SiO2 surface.
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超临界流体沉积(SCFD)技术作为MEMS制造的新工具
本文提出了超临界流体沉积(SCFD)工艺在MEMS器件表面制备功能薄膜和涂层。SCFD可以在相对较低的温度下提供优越的台阶覆盖到高纵横比特征。它还提供了沉积多种材料的可能性,包括金属、氧化物和有机化合物,具有衬底选择性的可控性。例如,纯Cu在220°C下共形沉积在直径为50nm,深度为1¿m的ULSI互连的高纵横比通孔上。Cu- scfd工艺是一种选择性工艺,只能在导电表面沉积Cu膜,但通过使用CuMnOx作为Cu和绝缘衬底之间的缓冲层,也可以实现Cu的非选择性沉积。在200℃下,在宽500 nm、深5¿m的高纵横比沟槽中共形制备SiO2薄膜。在80℃条件下,将具有生物相容性的聚乙二醇单甲基丙烯酸酯(PEGMA)接枝到长径比为2500的微通道表面,证明了其对蛋白质吸附SiO2表面的有效保护作用。
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